We report on the synthesis of organized arrays of gold (Au) nanoparticles on thermally oxidized Si wafers using sputtering as a metal deposition method in combination with sphere lithography. This simple process leads to the formation of a honeycomb mask of Au at room temperature (RT). We study the transformation mechanism of this honeycomb mask to a hexagonal array of Au nanoparticles by annealing at different temperatures and in different atmospheres. The underlying mechanisms of pattern formation during annealing are coalescence of particles and Ostwald ripening and depend on temperature and atmosphere. The crystallinity and orientation of the nanoparticles with respect to the underlying substrate is analyzed by electron backscatter diffraction (EBSD), and the control of the morphology, size, shape, and orientation in different atmospheres (argon (Ar), nitrogen (N2), air, hydrogen (H2), and vacuum) is discussed.

Silicon nanowires (SiNWs) were produced by nanosphere lithography and metal assisted chemical etching. The combination of these methods allows the morphology and organization control of Si NWs on a large area. From the investigation of major parameters affecting the etching such as doping type, doping concentration of the substrate, we demonstrate the formation of new Si architectures consisting of organized Si NW arrays formed on a micro/mesoporous silicon layer with different thickness. These investigations will allow us to better understand the mechanism of Si etching to enable a wide range of applications such as molecular sensing, and for thermoelectric and photovoltaic devices.

An effective postgrowth electrical tuning, via an oxygen releasing method, to enhance the content of non-noble metals in deposits directly written with gas-assisted focused-electron-beam-induced deposition (FEBID) is presented. It represents a novel and reproducible method for improving the electrical transport properties of Co-C deposits. The metal content and electrical properties of Co-C-O nanodeposits obtained by electron-induced dissociation of volatile Co(CO) precursor adsorbate molecules were reproducibly tuned by applying postgrowth annealing processes at 100 °C, 200 °C, and 300 °C under high-vacuum for 10 min. Advanced thin film EDX analysis showed that during the annealing process predominantly oxygen is released from the Co-C-O deposits, yielding an atomic ratio of Co:C:O = 100:16:1 (85:14:1) with respect to the atomic composition of as-written Co:C:O = 100:21:28 (67:14:19). In-depth Raman analysis suggests that the amorphous carbon contained in the as-written deposit turns into graphite nanocrystals with size of about 22.4 nm with annealing temperature. Remarkably, these microstructural changes allow for tuning of the electrical resistivity of the deposits over 3 orders of magnitude from 26 mΩ cm down to 26 μΩ cm, achieving a residual resistivity of ρ/ρ = 0.56, close to the value of 0.53 for pure Co films with similar dimensions, making it especially interesting and advantageous over the numerous works already published for applications such as advanced scanning-probe systems, magnetic memory, storage, and ferroelectric tunnel junction memristors, as the graphitic matrix protects the cobalt from being oxidized under an ambient atmosphere.

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The loading rate effect on the brittle-ductile transition temperatures of tungsten single crystals at the micro-scale was investigated by microcantilevers with a (100)[001] crack system. Specimens with a length to width to height of 15 µm / 4 µm / 6 µm were fabricated by focused ion beam milling. At low temperatures (-90 to -25 °C) the samples failed by brittle cleavage fracture, irrespective of the applied loading rate at a fracture toughness of 3.2 MPa•m 1/2 . With increasing temperatures up to 500 °C and depending on the applied loading rate, the fracture toughness increased and significant crack tip plasticity and dislocation-controlled microcleavage were observed by means of high resolution electron backscatter diffraction measurements performed after testing. With respect to macroscopic specimens, a shift of the brittle-ductile transition to lower temperatures and a significantly lower activation energy of the brittle-ductile transition of 0.36 eV were found. We explain this by the increase in flow stresses due to sample size effects.

Overcoming the difficulty in the precise definition of the metal phase of metal−Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the formation of monolithic Al−Si heterostructures obtained from both bottom-up and top-down fabricated Si nanostructures and Al contacts. This is enabled by a thermally induced Al−Si exchange reaction, which forms abrupt and void-free metal−semiconductor interfaces in contrast to their bulk counterparts. The selective and controllable transformation of Si NWs into Al provides a nanodevice fabrication platform with high-quality monolithic and single-crystalline Al contacts, revealing resistivities as low as ρ = (6.31 ± 1.17) × 10 −8 Ω m and breakdown current densities of J max = (1 ± 0.13) × 10 12 Ω m −2 . Combining transmission electron microscopy and energy-dispersive X-ray spectroscopy confirmed the composition as well as the crystalline nature of the presented Al−Si−Al heterostructures, with no intermetallic phases formed during the exchange process in contrast to state-of-the-art metal silicides. The thereof formed single-element Al contacts explain the robustness and reproducibility of the junctions. Detailed and systematic electrical characterizations carried out on back-and top-gated heterostructure devices revealed symmetric effective Schottky barriers for electrons and holes. Most importantly, fulfilling compatibility with modern complementary metal−oxide semiconductor fabrication, the proposed thermally induced Al−Si exchange reaction may give rise to the development of nextgeneration reconfigurable electronics relying on reproducible nanojunctions.