Research in electric double-layer capacitors (EDLCs) and rechargeable batteries is converging to target systems that have battery-level energy density and capacitor-level cycling stability and power density. This research direction has been facilitated by the use of redox-active electrolytes that add faradaic charge storage to increase energy density of the EDLCs. Aqueous redox-enhanced electrochemical capacitors (redox ECs) have, however, performed poorly due to cross-diffusion of soluble redox couples, reduced cycle life, and low operating voltages. In this manuscript, we propose that these challenges can be simultaneously met by mechanistically designing a liquid-to-solid phase transition of oxidized catholyte (or reduced anolyte) with confinement in the pores of electrodes. Here we demonstrate the realization of this approach with the use of bromide catholyte and tetrabutylammonium cation that induces reversible solid-state complexation of Br/Br. This mechanism solves the inherent cross-diffusion issue of redox ECs and has the added benefit of greatly stabilizing the reactive bromine generated during charging. Based on this new mechanistic insight on the utilization of solid-state bromine storage in redox ECs, we developed a dual-redox EC consisting of a bromide catholyte and an ethyl viologen anolyte with the addition of tetrabutylammonium bromide. In comparison to aqueous and organic electric double-layer capacitors, this system enhances energy by factors of ca. 11 and 3.5, respectively, with a specific energy of ∼64 W·h/kg at 1 A/g, a maximum power density >3 kW/kg, and cycling stability over 7000 cycles.

Cathodoluminescence is used to measure the recombination velocity of the heterointerfaces between Cu2ZnSnS4 (CZTS) and CuxSnySz, SnS secondary phases precipitated along the grain boundaries as well as ZnS precipitated within the CZTS grain interiors. The CZTS/CuxSnySz and CZTS/ZnS heterointerfaces had recombination velocities smaller than the bulk carrier diffusion velocity while the opposite is true for the CZTS/SnS heterointerface. Secondary phases having crystal structures compatible with CZTS (e.g., ZnS, Cu2SnS3) are likely to form heterointerfaces with small misfit strain and hence low interfacial recombination velocity. The precipitation of such secondary phases along grain boundaries in CZTS provides a novel mechanism for grain boundary passivation. However, it is not known if grain boundary passivating secondary phases would necessarily increase the overall photovoltaic device efficiency since other factors, such as the band gap of the secondary phase compared to the Shockley-Queisser ideal value and the nature of the heterointerface between CZTS (i.e., type-I vs type-II), also affect device operation and must therefore be taken into consideration.

New emerging technologies in the field of flexible electronic devices require that metal films adhere well and flex with polymer substrates. Common thin film materials used for these applications include copper (Cu) with an adhesion interlayer of chromium (Cr). Copper can be quite ductile and easily move with the polymer substrate. However, Cr is more brittle and fractures at lower strains than Cu. This study aims to examine the fracture and subsequent buckling and delamination of strained Cr films on polyimide (PI). In-situ scanning electron microscope (SEM) straining is used to systematically study the influence of film thickness on fracture and buckling strains. Film fracture and delamination depend on film thickness, and increases in crack and buckle density with decreasing thickness are explored by a shear lag model.