A comparative study of microstructural stability and sulphur diffusion in CdS/CdTe photovoltaic devices

Taylor, Aidan A.; Major, Jonathan D.; Kartopu, Giray; Lamb, David; Duenow, Joel N.; Dhere, R. G.; Maeder, Xavier; Irvine, S.J.C.; Durose, K.; Mendis, Budhika G.

doi:10.1016/j.solmat.2015.06.010

Cited by 39 publications

(43 citation statements)

References 50 publications

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“…In fact the CL spectrum acquired from near the CdS-CdTe interface showed a blue shift of the 600 nm broad peak to ~534 nm wavelength. Furthermore, the 820 nm peak associated with the CdTe 'bulk' specimen had red shifted to ~838 nm wavelength due to band gap narrowing in CdS x Te 1-x [22,30]. Interestingly the enhanced CL emission at ~260 nm thickness, which is thought to be due to multiple beam interference of the incoherent luminescence generated from within the specimen, is also absent in Fig.…”

Section: Tem-cl Resultsmentioning

confidence: 91%

“…Instead a constant intensity is observed within the CdTe layer, consistent with transition radiation generated at the specimen surfaces. Note that the slight increase in intensity near the CdS-CdTe interface is likely to be due to sulphur diffusion [22], since CdS x Te 1-x is known to have different dielectric properties to CdTe [30]. In fact the CL spectrum acquired from near the CdS-CdTe interface showed a blue shift of the 600 nm broad peak to ~534 nm wavelength.…”

Section: Tem-cl Resultsmentioning

confidence: 95%

“…The sample investigated is a ~2.5 µm thick polycrystalline CdTe layer deposited by close space sublimation [22]. CdTe is an exemplar thin-film photovoltaic material and there is considerable interest in its grain boundary optoelectronic properties.…”

Section: Experimental Methodologymentioning

confidence: 99%

“…The device consists of the following sequence of layers: glass superstrate, fluorine doped SnO 2 , ZnO, CdS and CdTe. There is some inter-diffusion of sulphur from CdS into the CdTe, although the sulphur concentration rapidly decreases to ~5 at% within ~100 nm of the interface [22]. Furthermore, the sample has undergone a CdCl 2 activation treatment to improve the device efficiency [22].…”

Section: Experimental Methodologymentioning

confidence: 99%

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The role of transition radiation in cathodoluminescence imaging and spectroscopy of thin-foils

Mendis

Howkins

Stowe³

et al. 2016

Ultramicroscopy

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Section: Tem-cl Resultsmentioning

confidence: 91%

Section: Tem-cl Resultsmentioning

confidence: 95%

Section: Experimental Methodologymentioning

confidence: 99%

Section: Experimental Methodologymentioning

confidence: 99%

See 2 more Smart Citations

The role of transition radiation in cathodoluminescence imaging and spectroscopy of thin-foils

Mendis

Howkins

Stowe³

et al. 2016

Ultramicroscopy

Self Cite

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“…Sulfur diffusion in CdS-CdTe photovoltaics forms a CdS x Te 1-x layer at the interface [4][5][6][7][8] and is usually assumed to be beneficial [4,9] since it reduces the large (~10%) lattice mismatch between CdS and CdTe. Electrical losses due to recombination are therefore presumed to be minimised.…”

Section: Manuscriptmentioning

confidence: 99%

The effects of junction interdiffusion and misfit dislocations on the efficiency of highly mismatched heterojunction photovoltaic devices

Mendis

Treharne

Lane

et al. 2016

Applied Physics Letters

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Assessment of photovoltaic junction position using combined focused ion beam and electron beam‐induced current analysis of close space sublimation deposited CdTe solar cells

Major

Bowen

Treharne

et al. 2014

Progress in Photovoltaics

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A major limitation of the cross-section electron beam-induced current method-the use of roughly fractured surfaces to provide the cross-section-has been overcome with the use of focused ion beam microscope sample preparation. Using this method, it was possible to undertake a study of the relation between junction position and the corresponding external quantum efficiency (EQE) curves. For the case of cadmium telluride (CdTe) cells, it was demonstrated that the EQE curve shape that indicates a buried CdTe homojunction only arises if the junction is buried by more than 0.9 μm from the heterointerface. This highlights the limitations of interpreting EQE curve shape to determine junction position. It was also shown that extended postgrowth annealing degrades the cadmium sulfide by Kirkendall voiding, and this leads to efficiency loss.

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A comparative study of microstructural stability and sulphur diffusion in CdS/CdTe photovoltaic devices

Cited by 39 publications

References 50 publications

The role of transition radiation in cathodoluminescence imaging and spectroscopy of thin-foils

The role of transition radiation in cathodoluminescence imaging and spectroscopy of thin-foils

The effects of junction interdiffusion and misfit dislocations on the efficiency of highly mismatched heterojunction photovoltaic devices

Assessment of photovoltaic junction position using combined focused ion beam and electron beam‐induced current analysis of close space sublimation deposited CdTe solar cells

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