The effects of junction interdiffusion and misfit dislocations on the efficiency of highly mismatched heterojunction photovoltaic devices

Abstract

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Optical Properties and Dielectric Functions of Grain Boundaries and Interfaces in CdTe Thin-Film Solar Cells

“…Also shown in Figure c is the simulated spectrum for a 2.8 nm CdTe 1– x S x layer sandwiched between bulk CdS and CdTe. Analytical expressions for a multilayer system , were used in the simulation. The area under the curves in Figure c is normalized for direct comparison.…”

“…Also shown in Figure a is the simulated spectrum for a 4 nm grain boundary “layer” sandwiched between bulk CdTe. Analytical expressions for a multilayer system , were used in the simulation. The real (ε 1 ) and imaginary (ε 2 ) parts of the complex dielectric function for CdTe and CdTe grain boundary are shown in (b) and (c), respectively.…”

“…Experimentally sulphur inter-mixing gives rise to a decrease in EQE in the ~500-600 nm wavelength range as well as an increased EQE at the long wavelength, absorption edge threshold 8 , although this is not observed in Figure 2e. This could be due to delocalisation errors in the extracted CdTe x S 1-x dielectric function, and/or other factors not taken into account in the EQE simulation, such as any effect of sulphur alloying on carrier diffusion length and space charge width, changes in the CdS layer thickness, as well as the role of CdSabsorber layer misfit strain on carrier recombination 25 . Figure 3a is a MAADF image of a CdTe high angle grain boundary.…”

“…The low loss EELS spectrum was Fourier-log deconvolved 10 in order to 1c is the simulated spectrum for a 2.8 nm CdTe 1−x S x layer sandwiched between bulk CdS and CdTe. Analytical expressions for a multilayer system 24,25 were used in the simulation. The area under the curves in Figure 1c extract the single scattering distribution.…”

“…This could be due to delocalization errors in the extracted CdTe x S 1−x dielectric function and/or other factors not taken into account in the EQE simulation, such as any effect of sulfur alloying on carrier diffusion length and space charge width, changes in the CdS layer thickness, as well as the role of CdS-absorber layer misfit strain on carrier recombination. 25 CdTe Grain Boundaries. Figure 3a is a MAADF image of a CdTe high angle grain boundary.…”