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Using a thermionic vacuum arc, single-crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info.

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LTO thin film was deposited for the first time on a glass microscope slide (MS) by RF magnetron sputtering technology. This method has been suitable for preparation of high-quality thin films. The surface properties of the produced film were determined by atomic force microscope (AFM). The surface of the produced film appeared smooth and homogeneous. LTO coated on MS had compact structure and low roughness. A UV–vis spectrophotometer was used to determine intensity of light passing through the samples. Thus, according to the results obtained the produced film was highly transparent. The refractive index of the LTO thin film was presented in a low MSE value by spectroscopic ellipsometry (SE) and it was about 1.5. The optical band gap (E g) was determined by the Tauc method. The produced LTO thin film exhibited a wide band gap semiconductor property with a band gap energy of about 2.95 eV. Finally, the surface free energy of the LTO thin film was calculated from the contact angle measurements using the Lewis acid-base, OWRK/Fowkes, Wu and Zisman methods.

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