Investigation on the morphology and surface free energy of the AlGaN thin film

Özen, Soner; Şenay, Volkan; Pat, Şuat; Korkmaz, Şadan

doi:10.1016/j.jallcom.2015.08.225

Cited by 23 publications

(9 citation statements)

References 34 publications

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“…Volume of liquid droplet was 4 μL and carefully deposited onto the sample surface with a dosing rate of 2 μL/s. The surface energies were calculated from the contact angles [ 15 , 16 , 17 ] of pure test liquids water and ethylene glycol (C 2 H 6 O 2 ). Calculations were based on 3–5 repeats in each sample and averaged for more precise results.…”

Section: Methodsmentioning

confidence: 99%

“…The unbalance forces for the molecules at the surface leads to additional energy at the surface, and this additional energy at the surface is known as surface free energy which depends mainly on chemistry of the surface, and significantly can be controlled by synthesis parameters [14]. The surface energy was calculated for various thin film systems according to the measured contact angles [15,16,17]. The outcomes show that the surface energy of NiFe films is inversely proportional to the crystallinity and grain size [18].…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Sputtering Parameters and Doping of Copper on Surface Free Energy and Magnetic Properties of Iron and Iron Nitride Nano Thin Films on Polymer Substrate

et al. 2017

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The objective of this study was to deposit thin films on PET polymer substrate and examine the functional properties systematically. Their properties have been studied as a function of the N2-Ar flow rates, deposition time span and Cu doping. Iron nitride film deposited on both sides exhibits ferromagnetic phases, γ′-Fe4N and ε-Fe3N co-existed, shows negligible magnetic anisotropy. Other samples show the evolution of N-rich (FeN, Fe2N) and N-poor (Fe16N2, Fe3N, Fe4N) phases under different deposition time conditions. XPS analysis and free energy calculations confirmed that co-sputtered Fe-Cu thin films are more stable than layer deposited counterparts. From VSM results it is evident that the dominant phase, changes steadily from the ferromagnetic α-Fe (N) to the paramagnetic ξ-Fe2N with the increase of nitrogen flow rates and the ordering of the nitrogen atoms. Binding energy increases steadily from 733 eV to 740 eV with the increasing thickness of thin films from 74 nm to 94 nm. It was observed that surface energy decreases as the contact angle of glycol increases and changes the thin film surface from polar to nonpolar. TEM images indicate that cubic γ′-Fe4N and ε-Fe3N nano particles oriented in preferred directions dispersed uniformly in the amorphous iron nitride matrix.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Effect of Sputtering Parameters and Doping of Copper on Surface Free Energy and Magnetic Properties of Iron and Iron Nitride Nano Thin Films on Polymer Substrate

et al. 2017

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“…The nitride semiconductors are studied for their potential applications in high-frequency and power electronic devices, such as AlGaN thin films on a glass substrate. The 52 nm thick film showed the p-type conductivity with a bandgap around 3.3 eV [165]. The water contact angle below 90 • indicated rather hydrophilic character of the film.…”

Section: Gallium-based Materialsmentioning

confidence: 96%

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

et al. 2020

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This review summarizes the more-than-25-years of development of the so-called thermionic vacuum arc (TVA). TVA is an anodic arc discharge in vapors of the material to be deposited; the energy for its melting is delivered by means of a focused electron beam. The resulting material ions fall at the substrate where they form a well-adhesive layer; the ion energy is controllable. The deposited layers are, as a rule, free from droplets typical for cathodic arc deposition systems and the thermal stress of the substrates being coated is low. TVA is especially suitable for processing refractory metals, e.g., carbon or tungsten, however, in the course of time, various useful applications of this system originated. They include layers for fusion application, hard coatings, low-friction coatings, biomedical-applicable films, materials for optoelectronics, and for solid-state batteries. Apart from the diagnostic of the film properties, also the diagnostic of the TVA discharge itself as well as of the by TVA generated plasma was performed. The research and application of the TVA proceeds in broad international collaboration. At present, the TVA technology has found its firm place among the different procedures for thin film deposition.

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“…For better understanding, the average grain size for AlN and AlGaN layers has been evaluated by using the Scherrer formula: [20,23] Here, 't' is the average grain size, 'K' is a proportionality constant (assumed value near to unity), 'λ' is the wavelength of the incident beam (0.15406 nm), 'β' is the (1) t = K ⋅ λ∕β cos θ FWHM of the AlN and AlGaN peak from 2θ-omega scan of HRXRD pattern along (0002) plane of diffraction (in radians), and 'θ' is the diffraction angle of the AlN (0002) and AlGaN (002) peaks. The grain sizes obtained by the Scherrer formula are tabulated in Table 1.…”

Section: Structural Propertiesmentioning

confidence: 99%

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

et al. 2021

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We have investigated the impact of AlN buffer layer growth parameters for developing highly single crystalline AlGaN films. The low mobility of Al adatoms and high temperature for compound formation are amongst the major causes that affects the growth quality of AlGaN films. Thus, proper optimization need to be carried out for achieving high quality AlGaN due to an augmented tendency of defect generation compared to GaN films. Thus, growth conditions need to be amended to maximize the incorporation ability of adatoms and minimize defect density. So, this study elaborates the growth optimization of AlGaN/AlN/Si (111) heterostructure with varied AlN buffer growth temperature (760 to 800 °C). It was observed that the remnant Al in low temperature growth of AlN buffer layer resist the growth quality of AlGaN epitaxial films. A highly single crystalline AlGaN film with comparatively lowest rocking curve FWHM value (~ 0.61°) and smooth surface morphology with least surface defect states was witnessed when AlN buffer was grown at 780 °C. From the Vegard’s law, the photoluminescence analysis unveils Aluminium composition of 31.5% with significantly reduced defect band/NBE band ratio to 0.3. The study demonstrates good crystalline quality AlGaN film growth with Aluminium content variation between ~ 30–39% in AlGaN/AlN heterostructure on Si(111) substrate leading to a bandgap range which is suitable for next-generation solar-blind photodetection applications.

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Investigation on the morphology and surface free energy of the AlGaN thin film

Cited by 23 publications

References 34 publications

The Effect of Sputtering Parameters and Doping of Copper on Surface Free Energy and Magnetic Properties of Iron and Iron Nitride Nano Thin Films on Polymer Substrate

The Effect of Sputtering Parameters and Doping of Copper on Surface Free Energy and Magnetic Properties of Iron and Iron Nitride Nano Thin Films on Polymer Substrate

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

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