GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)

Pat, Şuat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan

doi:10.1016/j.matchemphys.2015.03.043

Cited by 30 publications

(7 citation statements)

References 20 publications

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“…Direct band gap values determined by optical method are consistent with the molar fraction “x=0.1' of the In x Ga 1‐x N in the Moses et al paper (Moses and Van de Walle, ). Band gap energies of the samples are lower than the values reported for GaN thin film on glass substrate in our previous paper (Pat et al ., ). Indium leads to the shrinkage of the band gap value.…”

Section: Resultsmentioning

confidence: 99%

“…The AFM, FESEM micrographs and analysis results found in present study are identical to micrographs and results presented in the literature (Ji et al ., ; Oliver et al ., ; Bae et al ., ). The average roughness and average height presented in (Pat et al ., ) are consistent with S2 sample. S1 sample has higher roughness and larger grains.…”

Section: Resultsmentioning

confidence: 99%

“…In this research, InGaN thin films were prepared on amorphous glass substrates by the non‐reactive thermionic vacuum arc technique. Furthermore, this study presents a new deposition technique for GaN‐based solid‐state applications (Ekem et al ., ; Özen et al ., ; Pat et al ., ; Şenay et al ., ) by focusing the effect of the applied voltage between the anode and cathode on the morphological and optical properties of the InGaN thin films grown by thermionic vacuum arc. Transparent glass substrates were selected specifically for optical investigation of the produced films.…”

Section: Introductionmentioning

confidence: 99%

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The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

et al. 2015

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Summary: The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic. SCANNING 38: 14-20, 2016.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

et al. 2015

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“…TVA is a new and different technique from other techniques that produce plasma in anode metal vapors for the regulation of electrodes. The TVA takes place among the anode where the material is placed and a thermionic cathode which is heated directly [24,28,34]. Since there is no high temperature during coating process, there is no thermal expansion problem in the coating of metals [25].…”

Section: Methodsmentioning

confidence: 99%

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

Erdoğan

Kundakçı

2018

SN Appl. Sci.

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Group-III nitride semiconductors covering infrared, visible and ultraviolet spectral range have direct bandgaps changing from 0.7 eV (InN) to 3.4 eV (GaN). With this feature, optoelectronic devices such as light emitting diodes, laser diodes and ultraviolet (visible rays-UV) photodetectors are made. It is possible to grow high-quality InGaN epitaxial layers by modern crystal growth techniques such as molecular beam epitaxy, radio frequency sputtering method and metal organic chemical vapor deposition. Compared with these methods, the Thermionic Vacuum Arc, which is promising thin film growth technique, is relatively inexpensive and quite effective approach for preparing InGaN thin films. The purpose of this research is to investigate the physical properties of the film. The XRD patterns of the InGaN thin films deposited on the ITO substrate exhibited polycrystal structure. The larger crystallite size and smaller FWHM indicate better crystallization. Microstrain values also exhibit good crystallite films respect to the low dislocation density. This film has a potential for photovoltaic devices based on the absorbance graph. It was observed that the compound is homogeneously dispersed on the surface and that there is a nanoporous structure.

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“…Besides, the method is remarkably rapid to employ with low working budgets and high deposition rate. [18][19][20][21] Experimental TVA was performed for the deposition of the TiO 2 thin films on a glass and transparent flexible polyethylene terephthalate (PET) substrate for the first time. A schema of the experimental setup can be seen in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

A new method for titania thin film production

Şenay

Özen

Pat

et al. 2015

Journal of Thermoplastic Composite Materials

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In this research, transparent titania (TiO 2 ) thin films were deposited on a glass microscope slide and on a flexible polyethylene terephthalate (PET) substrate under a high vacuum condition by means of the thermionic vacuum arc (TVA) method in a very short period of time (60 s). Optical properties and surface properties of the coated TiO 2 surfaces are related to the structural changes of the coated layers due to ion energies and substrate effect. But obtained results are closely linked to literature values. Our analysis showed that the TVA method is an alternative method for low-temperature coatings and the produced films present important advantages for optical and industrial applications.

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GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)

Cited by 30 publications

References 20 publications

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

A new method for titania thin film production

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