The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

Özen, Soner; Şenay, Volkan; Pat, Şuat; Korkmaz, Şadan

doi:10.1002/sca.21237

Cited by 21 publications

(3 citation statements)

References 34 publications

(55 reference statements)

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“…The changes in optical bandgap energy might come from the % of indium incorporated in the InGaN layer. From the literature, the optical bandgap energy of film caused by indium leads to the shrinkage of the bandgap value (Özen et al , 2016). As summarized in Table 4, the optical bandgap values were comparable with other literature (Jakkala and Kordesch, 2017).…”

Section: Resultsmentioning

confidence: 99%

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Hamzah

Sahar²,

Tan³

et al. 2022

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Purpose This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures. Design/methodology/approach The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples. Findings The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements. Originality/value It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.

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Section: Resultsmentioning

confidence: 99%

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Hamzah

Sahar²,

Tan³

et al. 2022

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“…TVA is a new and different technique from other techniques that produce plasma in anode metal vapors for the regulation of electrodes. The TVA takes place among the anode where the material is placed and a thermionic cathode which is heated directly [24,28,34]. Since there is no high temperature during coating process, there is no thermal expansion problem in the coating of metals [25].…”

Section: Methodsmentioning

confidence: 99%

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

Erdoğan

Kundakçı

2018

SN Appl. Sci.

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Group-III nitride semiconductors covering infrared, visible and ultraviolet spectral range have direct bandgaps changing from 0.7 eV (InN) to 3.4 eV (GaN). With this feature, optoelectronic devices such as light emitting diodes, laser diodes and ultraviolet (visible rays-UV) photodetectors are made. It is possible to grow high-quality InGaN epitaxial layers by modern crystal growth techniques such as molecular beam epitaxy, radio frequency sputtering method and metal organic chemical vapor deposition. Compared with these methods, the Thermionic Vacuum Arc, which is promising thin film growth technique, is relatively inexpensive and quite effective approach for preparing InGaN thin films. The purpose of this research is to investigate the physical properties of the film. The XRD patterns of the InGaN thin films deposited on the ITO substrate exhibited polycrystal structure. The larger crystallite size and smaller FWHM indicate better crystallization. Microstrain values also exhibit good crystallite films respect to the low dislocation density. This film has a potential for photovoltaic devices based on the absorbance graph. It was observed that the compound is homogeneously dispersed on the surface and that there is a nanoporous structure.

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“…Gallium nitride (GaN) films studied on glass and PET [170], on Si substrates [171]. When studying the indium gallium nitride (InGaN) layers on glass substrates, [172] has found that " . .…”

Section: Gallium-based Materialsmentioning

confidence: 99%

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

et al. 2020

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This review summarizes the more-than-25-years of development of the so-called thermionic vacuum arc (TVA). TVA is an anodic arc discharge in vapors of the material to be deposited; the energy for its melting is delivered by means of a focused electron beam. The resulting material ions fall at the substrate where they form a well-adhesive layer; the ion energy is controllable. The deposited layers are, as a rule, free from droplets typical for cathodic arc deposition systems and the thermal stress of the substrates being coated is low. TVA is especially suitable for processing refractory metals, e.g., carbon or tungsten, however, in the course of time, various useful applications of this system originated. They include layers for fusion application, hard coatings, low-friction coatings, biomedical-applicable films, materials for optoelectronics, and for solid-state batteries. Apart from the diagnostic of the film properties, also the diagnostic of the TVA discharge itself as well as of the by TVA generated plasma was performed. The research and application of the TVA proceeds in broad international collaboration. At present, the TVA technology has found its firm place among the different procedures for thin film deposition.

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The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

Cited by 21 publications

References 34 publications

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

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