Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method

Geçici, Birol; Korkmaz, Şadan; Mohammadigharehbagh, Reza; Pat, Şuat; Özen, Soner; Şenay, Volkan; Yudar, H. Hakan

doi:10.1016/j.vacuum.2016.06.010

Cited by 48 publications

(6 citation statements)

References 32 publications

(31 reference statements)

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“…It is also known to be a potential solar cell absorber material [10], with a p-type conductivity [11], which is mainly attributed to the negatively charged Cu vacancies [12-14]. Several deposition techniques have been employed to synthesise cupric oxide thin films, including: pulsed laser deposition [15], electro deposition [16], sputtering [17], spray pyrolysis [6], thermal oxidation [18], chemical vapor deposition (CVD) [19], sol–gel [20] and SILAR [21], RF magnetron sputtering [22], plasma-assisted molecular beam epitaxy [1] and spray pyrolysis [23].…”

Section: Introductionmentioning

confidence: 99%

Thickness effect on electrical properties of copper oxide thin films

Kamli

Hadef

Chouial

et al. 2019

Surface Engineering

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Copper oxide (CuO) thin films were deposited by spray pyrolysis technique on glass substrates heated to 300°C. The effect of films thickness on the electrical characteristics (resistivity, free carrier concentration and Hall mobility of carriers) and morphological properties of CuO have been investigated. The obtained results indicate that the thickness increasing (longer periods of deposition time) have permitted the improvement of electrical characteristics of our films (decrease of the resistivity, increase of the free carriers concentration and the carriers Hall mobility). Scanning electron microscopy images of the samples prove that the films morphology change according to the film thickness and also show more homogeneity of CuO thin film grown at higher thicknesses.

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Section: Introductionmentioning

confidence: 99%

Thickness effect on electrical properties of copper oxide thin films

Kamli

Hadef

Chouial

et al. 2019

Surface Engineering

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“…In this part, the influence of the thickness and carrier concentration variation p-CuO absorber/n-ZnO Window layer have been inspected with the purpose to obtain the qualitative information on the device performance. Here, the carrier concentration of p-CuO as the absorber layer were varied from 1x10 13 to 5x10 17 cm -3 , meanwhile the thickness was varied from 10 to110 nm. Furthermore, the band gap energy value of the CuO absorber has been kept constant at 1.5 eV as illustrated in table 1.…”

Section: Investigation Of the Effects Of Thickness And Carrier Concen...mentioning

confidence: 99%

“…Among those, Cu-based metal oxides binary compounds, namely, cupric oxide (CuO, tenorite) cuprous oxide (Cu 2 O, cuprite), and Cu 4 O 3 (paramelaconite) have been particularly rigorously investigated [10]. Both cupric oxide (CuO) and cuprous oxide (Cu 2 O) are categorized as a stable form of copper oxide compounds, and commonly used in thin film solar cell structure as a p-type photo-absorber layer [11][12][13]. Cupric oxide (CuO) has a monoclinic crystal structure, and it has band gap in the range of 1.0-2.1 eV [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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2021

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In the current time, transparent and semitransparent solar cells in photovoltaic industry have drawn important attention owing to their potential use as solar windows, and energy harvesting devices for building, vehicle integration and flexible electronics. In this work, a semitransparent thin film heterojunction solar cells device structure of p-CuO/n-ZnO/AZO/ITO was numerically modeled using SCAPS-1D software tools. The cell's performance was investigated in terms of the different material layer properties, such as the thickness and carrier concentration or doping level. The simulation results of copper based semi-transparent thin film solar cell (TFSC) as the bottom cell model indicates that the highest efficiency was achieved at 8.9116 %, with the thickness and carrier concentration of n-ZnO material layer set at 20 nm, and 5.0 x 10 18 cm -3 respectively, whereas the thickness of CuO absorber layer was fixed at 110 nm. Finally, the overall results show that CuO based absorber layer exhibits potential as photoactive material particularly for semitransparent thin film solar cells applications.

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“…Here, cupric oxide (CuO) and cuprous oxide (Cu 2 O) are categorized as p-type metal oxide semiconductors. A documented intermediate product between the aforementioned phases is meta-stable copper oxide or Cu 4 O 3 [13]. These oxides have a variety of physical, structural and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of CuO thin films by a direct current reactive sputtering process for CO gas sensing application

Mahana¹,

Mauraya²,

Kumaragurubaran³

et al. 2023

Phys. Scr.

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A direct current magnetron reactive sputtering, one of the well-known physical vapour deposition (PVD) techniques, was employed for the preparation of CuO thin films at room temperature for CO gas sensing application. The effect of the O2 gas flow ratio on the phase formation of copper oxide was studied by varying the O2 flow rate in the total flow of Ar/O2 gas mixture. Cu2O phase was found to form at a low O2 flow ratio of 10 % and gradually converted into stable CuO phase with an increase in O2 flow ratio through the intermediate phase of Cu4O3. The films exhibited a granular morphology, and the average grain size increased with an increase in the O2 partial flow. Single-phase CuO thin film has been obtained with 40% of O2 gas flow ratio. The evolution of the copper oxide phases with increasing O2 partial flow was also confirmed using the Cu 2p and O 1s core-levels of X-ray photoelectron spectroscopy. The CO gas sensing characteristics of the CuO thin film were examined by varying the operating temperature in the range of 200-400 °C. An optimized CO sensing response of 127% has been obtained at 375 C towards 91 ppm concentration with a response/recovery time of 161 s / 99 s.

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Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method

Cited by 48 publications

References 32 publications

Thickness effect on electrical properties of copper oxide thin films

Thickness effect on electrical properties of copper oxide thin films

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Synthesis of CuO thin films by a direct current reactive sputtering process for CO gas sensing application

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