Stannous sulphide (SnS) thin films have been synthesised using two different solutions. The solutions were prepared by the dilution of SnCl 2 and thiourea in distilled water and methanol separately. The effects of solvents and deposition time on the properties of the prepared thin films are investigated. X-ray diffraction analysis revealed that the variation of the solvent and the deposition durations alters the structure of the prepared films. The films analysis by scanning electron microscope showed that the SnS films prepared with methanol are more dense and smooth than the SnS films prepared with distilled water. The resistivity depends on the used solvent and their growth duration. The elemental composition of the films deposited during 30 min with methanol indicate that SnS is quasi-stoichiometric, while those prepared with distilled water are slightly Sn rich. We have also found that the films deposited with distilled water are n-type, whereas those prepared with methanol are p-type.

In this paper, we predict the adhesion energy terms in metal/ceramic systems by using acoustic parameters of these combinations. Different approaches are used. Semiempirical relations are deduced for all systems. As shown, in all cases, the adhesion energy W ad increases linearly with Rayleigh velocity of ceramic substrate V RC. It takes the form W ad = 0.07V RC + C, where the first term of this equation represents the van der Waals contribution to W ad , which only depends on V RC. The second term represents the equilibrium chemical bonds contribution (W chem-equil) and strongly depends on the systems combination as well as on the energy gap of the ceramics substrate. Moreover, the W chem-equil energy is higher for small bandgap ceramic materials due to substantial charge carriers' density inside ceramic crystal and, consequently, ease and height electron transfer through the metal/ceramic interface. In this case, the W chem-equil is essentially depends on Rayleigh velocity V RM of deposited metal. For large bandgap ceramic materials, there are practically no free charges inside ceramic crystal. In this case, the electrons' transfer cannot be taking place and, as a result, the W chem-equil contribution is negligible. The importance of obtained relation lies in its universality and applicability to all investigated systems.

Thin films of SnSx, semiconductors, have been successfully synthesized by ultrasonic spray pyrolysis technique, using two precursors namely: tin (II) chloride and tin (IV) chloride, respectively. The solutions were prepared by the dilution of different Sn molarities of the two precursors separately. The precursor molarities were varied from 0.04 to 0.07 mol/L, whereas that of S was fixed at 0.1 mol/L. The present work focuses on the effect of the different precursor's molarities on the nature and the properties of the prepared thin films in order to optimize the growth conditions. X-ray diffraction analysis reveals that the precursor's molarities alter the grain size of the prepared films, which varied from 8 to 14 nm and from 12 to 16 nm, according to the used precursor. The films analysis by SEM, shows that the SnS2 films are more dense and smooth than the SnS films. The composition of the elements is analysed with an EDX spectrometer, and the obtained result for mol/L indicates that the atomic ratio of Sn to S is 51.57 : 48.43 and 36 : 64 for films synthesized from the first and second precursors respectively. Electrical measurements show that the conductivity behavior depends on the used precursors and their molarities.

The aim of this work is the production and the characterisation of (SnO2: (Mn, F)) thin films with appropriate optoelectronic properties required for application as ohmic contacts in photovoltaic application devices. Transparent conducting Manganese-fluorine co-doped tin oxide (SnO2: (Mn, F)) thin films have been deposited onto preheated glass substrates using the chemical spray pyrolysis (CSP) method. The ([Mn2+]/[Sn4+]) atomic concentration ratio (y) in the spray solution is varied between 0 and 8 at. %. The structural, the opto-electrical and the photoluminescence properties of these thin films have been studied. It is found that the deposited thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating the thickness uniformity and the surface homogeneity of the deposited samples. Photoluminescence behaviour of Mn-F co-doped SnO2 thin films was also studied. Photoluminescence spectra reveal the presence of the defects like oxygen vacancies in the materials. In addition, The electrical resistivity, volume carrier concentration, surface carrier concentration and electrical mobility were determined from Hall Effect measurements and the following results were obtained: n-type conductivity in all the deposited thin films, a low resistivity of 1.50×10-4 Ω cm, and a high electrical mobility of 45.40 cm2 V-1 s-1 with Mn co-doping concentration equals to 7 at. %. These experimental results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contacts in photovoltaic applications devices.

Copper oxide (CuO) thin films were deposited by spray pyrolysis technique on glass substrates heated to 300°C. The effect of films thickness on the electrical characteristics (resistivity, free carrier concentration and Hall mobility of carriers) and morphological properties of CuO have been investigated. The obtained results indicate that the thickness increasing (longer periods of deposition time) have permitted the improvement of electrical characteristics of our films (decrease of the resistivity, increase of the free carriers concentration and the carriers Hall mobility). Scanning electron microscopy images of the samples prove that the films morphology change according to the film thickness and also show more homogeneity of CuO thin film grown at higher thicknesses.