The noise performances of a new base-collector self-aligned technology of double-heterojunction single-finger InGaAs/InP bipolar transistor are investigated at 300K. Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area. A low minimum noise figure F F F min min min = 0:6 dB is demonstrated at 2 GHz with a 4.8-m 2 emitter. Variations of F F F min min min show a minimum versus collector current. The high cutoff frequencies of the devices limit the increase of F F F min min min versus frequency.
ISBN: 0780386566This paper is aimed at studying defect-oriented test techniques for RF components in order to optimize production test sets. This study is mandatory for the definition of an efficient test flow strategy. We have carried out a fault simulation campaign for a low-noise amplifier (LNA) for reducing a test set while maintaining high fault coverage. The set of production test measurements should include low-cost structural tests such as simple current consumption and only a few more sophisticated tests dedicated to functional specifications such as S parameters, noise figure (NF) or IP3
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