Four noise parameter determination method for transistors based on the frequency dependence of the noise figure

Application of partially coherent modes for studying generation of a Gaussian partially coherent laser beam

“…At the bias level represented in figure 5, F min and R n /Z 0 are nearly frequency independent. This frequency behaviour for measurements and modelling results is in agreement with other works (for example, see [8]). This behaviour comes from the high dynamic performances of the HBT leading to a small dependence of F min at much lower frequency which we observed in figure 5, for the device B1 with f T ≈ 205 GHz.…”

“…MWN measurements are performed between 0.5 GHz and 18 GHz with an in-house noise measurement setup; the measurement principle description can be found in [8]. The 'open' noise de-embedding technique is used to subtract the noise contribution of access lines and pads [9].…”

Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

“…is the reflection coefficient seen by the device at its input. Their determination [3] exploits the information contained in the noise figure variation versus frequency for only two impedance sources-a 50-and a shorted delay line presented at the transistor input.…”

“…The measurements are performed in the 2-18 GHz frequency range using an original noise test set [3]. The noise figure , the noise resistance , and the associated gain are studied versus frequency, collector current, and emitter area in single emitter devices.…”

Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

“…Noise measurement was performed at 300 K The noise test set is designed around a Cascade on-wafer probe, a HP8510C vector network analyzer and a HP8563E spectrum analyzer. Noise parameters determination exploits the noise figure variation versus frequency [4].…”