Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

Abstract

The noise performances of a new base-collector self-aligned technology of double-heterojunction single-finger InGaAs/InP bipolar transistor are investigated at 300K. Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area. A low minimum noise figure F F F min min min = 0:6 dB is demonstrated at 2 GHz with a 4.8-m 2 emitter. Variations of F F F min min min show a minimum versus collector current. The high cutoff frequencies of the devices limit the increase of F F F min min min versus frequency.

Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si/SiGe:C and InP/InGaAs HBTs

“…The NF min and R n of both HBTs are practically constant over the whole frequency range. This frequency behaviour of measurements and modelling is in accordance with [19,31]. These references suggest that important dynamic performances strongly reduce the frequency variations of NF min , which we observed for both devices at the bias level depicted.…”

Design of an ultraviolet filter based on photonic band‐gap materials

“…Based on the above measured results, a comparison of the noise performances with the reported microwave noise figures of LM InP-based HBT are summarized in Table 1. As shown in Table 1, for the MM InP DHBT with an emitter area of 25 m 2 and a collector current density of 11.4 kA/cm 2 , the measured F MIN ϳ 2.8 dB is comparable to the F MIN ϳ 2.6 dB reported InP-based DHBT with comparable emitter area and collector current density [1]. For a slightly larger emitter area, the MM HBT's noise figure is slightly lower than the reported InPbased HBT with comparable collector current density [8].…”

“…Thus, even though the minimum noise figure increases at I C ϭ 1.1 mA and V CE ϭ 1.5 V, its associated gain is sufficiently high for applications at this frequency band. Better noise performance for MM HBTs can be expected through the optimization of the buffer layer growth [5] and the reduction of emitter width [1].…”

“…InP/InGaAs heterojunction bipolar transistors (HBTs) latticematched (LM) to InP have demonstrated excellent microwave and noise performance compared to the commonly used GaAs HBTs due to the superior transport properties of InGaAs and the low surface recombination velocity of the InP/InGaAs material system [1,2]. For example, a world-record f MAX of ϳ800 GHz has been reported [3]; an InP HBT with a low-noise figure of 0.46 dB at 2 GHz has also been demonstrated [4].…”

“…A global change in the telecommunication transport world has aroused great demands for photonic band gap (PBG) materials. This has led to considerable scientific attention being paid to these materials lately, because of their ability to manipulate photons and their potential applications in the field of photonics, such as efficient optical filters [1,2], omnidirectional reflectors [3,4], thresholdless semiconductor lasers [5], endlessly single-mode optical fiber [6], et cetera and anomalously small group velocities at the band edges. Photonic band-gap material is a new optical material in which the refractive index changes periodically and the band gap can be formed for a certain range of photon energies [7] or photon frequencies.…”