1997
DOI: 10.1007/bf02677898
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A low-noise cryogenically-cooled 8–12 GHz HEMT Amplifier for future space applications

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Cited by 6 publications
(3 citation statements)
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“…For example, when designing a circuit for a low-temperature amplifier, such as the one used for space technology and satellite communications, one needs to perform a test at room temperature (RT) first. When cooling down the amplifier, its characteristics can be significantly different since the resistance of the device based on HEMT structure may be a lot lower than that at RT [ 24 ]. Therefore substantial variation in the circuitry design based on the RT test is required.…”
Section: Resultsmentioning
confidence: 99%
“…For example, when designing a circuit for a low-temperature amplifier, such as the one used for space technology and satellite communications, one needs to perform a test at room temperature (RT) first. When cooling down the amplifier, its characteristics can be significantly different since the resistance of the device based on HEMT structure may be a lot lower than that at RT [ 24 ]. Therefore substantial variation in the circuitry design based on the RT test is required.…”
Section: Resultsmentioning
confidence: 99%
“…This new level can be either above or below the original voltage level, depending on the present state of the system and the type of pulse used. Provided it is possible to reduce the ambient voltage noise on the SQUID ring sufficiently, for example by the use of cryogenically cooled GaAsFET [1] or HEMT-based preamplifier electronics [23], it should prove possible to develop devices with a controlled voltage response which can be selected, and modified, at will. This could prove useful in such areas as multi-level logic or finite state machinery [18,19,20,21,22].…”
Section: Discussionmentioning
confidence: 99%
“…In our case, we apply the method to a Fujitsu FHX13X HEMT transistor [3,4]. T g and T d are extracted for each measured frequency point.…”
Section: Noise Model Extractionmentioning
confidence: 99%