Recent developments in silicon based optoelectronics relevant to fiber optical communication are reviewed. Siliconon-insulator photonic integrated circuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has created the potential for silicon based devices with tailored optical response in the near infrared. The deep submicrometer CMOS process can produce gigabits-per-second low-noise lightwave electronics. These trends combined with economical incentives will ensure that silicon-based optoelectronics will be a player in future fiber optical networks and systems.
We present three front-end IC's implemented in 0.6pm CMOS process that meet or exceed the specifications for 1.25Gb/s fiber-based Gigabit Ethernet. The two-stage differential transimpedance amplifier utilizes bondwire based inductive peaking to attain 1.1 GHz bandwidth. The quantizer employs novel modified Cherry-Hooper architecture to achieve a 52dB dynamic range and 1.5GHz bandwidth. The laser driver features on chip automatic laser power control circuitry and provides up to 40mA of modulation current at 1.25GbIs.
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