We report the fabrication and experimental characterization of an ultra-high Q microdisk resonator in a silicon-on-insulator (SOI) platform. We examine the role of the substrate in the performance of such microdisk resonators. While substrate leakage loss has warranted the necessity of substrate undercut structures in the past, we show here that the substrate has a very useful role to play for both passive chip-scale device integration as well as active electronic device integration. Two device architectures for the disk-on-substrate are studied in order to assess the possibility of such an integration of high Q resonators and active components. Using an optimized process for fabrication of such a resonator device, we experimentally demonstrate a Q approximately 3 x 10(6), corresponding to a propagation loss approximately 0.16 dB/cm. This, to our knowledge, is the maximum Q observed for silicon microdisk cavities of this size for disk-on-substrate structures. Critical coupling for a resonance mode with an unloaded Q approximately 0.7 x 10(6) is observed. We also report a detailed comparison of the obtained experimental resonance spectrum with the theoretical and simulation analysis. The issue of waveguide-cavity coupling is investigated in detail and the conditions necessary for the existence or lack of critical coupling is elaborated.

High quality factor (Q approximately 3.4 x 10(6)) microdisk resonators are demonstrated in a Si(3)N(4) on SiO(2) platform at 652-660 nm with integrated in-plane coupling waveguides. Critical coupling to several radial modes is demonstrated using a rib-like structure with a thin Si(3)N(4) layer at the air-substrate interface to improve the coupling.

Recent developments in silicon based optoelectronics relevant to fiber optical communication are reviewed. Siliconon-insulator photonic integrated circuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has created the potential for silicon based devices with tailored optical response in the near infrared. The deep submicrometer CMOS process can produce gigabits-per-second low-noise lightwave electronics. These trends combined with economical incentives will ensure that silicon-based optoelectronics will be a player in future fiber optical networks and systems.

High quality (Q approximately 6 x 10(5)) microdisk resonators are demonstrated in a Si(3)N(4) on SiO(2) platform at 652-660 nm with integrated in-plane wrap-around coupling waveguides to enable critical coupling to specific microdisk radial modes. Selective coupling to the first three radial modes with >20dB suppression of the other radial modes is achieved by controlling the wrap-around waveguide width. Advantages of such pulley-coupled microdisk resonators include single mode operation, ease of fabrication due to larger waveguide-resonator gaps, the possibility of resist reflow during the lithography phase to improve microdisk etched surface quality, and the ability to realize highly over-coupled microdisks suitable for low-loss delay lines and add-drop filters.

We experimentally demonstrate a high resolution integrated spectrometer on silicon on insulator (SOI) substrate using a large-scale array of microdonut resonators. Through top-view imaging and processing, the measured spectral response of the spectrometer shows a linewidth of ~0.6 nm with an operating bandwidth of ~50 nm. This high resolution and bandwidth is achieved in a compact size using miniaturized microdonut resonators (radius ~2 μm) with a high quality factor, single-mode operation, and a large free spectral range. The microspectrometer is realized using silicon process compatible fabrication and has a great potential as a high-resolution, large dynamic range, light-weight, compact, high-speed, and versatile microspectrometer.

We experimentally demonstrate efficient extinction spectroscopy of single plasmonic gold nanorods with exquisite fidelity (SNR > 20dB) and high efficiency light coupling (e. g., 9.7%) to individual plasmonic nanoparticles in an integrated platform. We demonstrate chip-scale integration of lithographically defined plasmonic nanoparticles on silicon nitride (Si3N4) ridge waveguides for on-chip localized surface plasmon resonance (LSPR) sensing. The integration of this hybrid plasmonic-photonic platform with microfluidic sample delivery system is also discussed for on-chip LSPR sensing of D-glucose with a large sensitivity of ∼ 250 nm/RIU. The proposed architecture provides an efficient means of interrogating individual plasmonic nanoparticles with large SNR in an integrated alignment-insensitive platform, suitable for high-density on-chip sensing and spectroscopy applications.

The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

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