By creating line defects in the structure of a phononic crystal (PC) made by etching a hexagonal array of holes in a 15 μm thick slab of silicon, high-Q PC resonators are fabricated using a complimentary-metal-oxide-semiconductor-compatible process. The complete phononic band gap of the PC structure supports resonant modes with quality factors of more than 6000 at frequencies as high as 126 MHz. The confinement of acoustic energy is achieved by using only a few PC layers confining the cavity region. The calculated frequencies of resonance of the structure using finite element method are in a very good agreement with the experimental data. The performance of these PC resonator structures makes them excellent candidates for wireless communication and sensing applications.

International audienceWe show the evidence of the existence of large complete phononic band gaps (CPBGs) in two-dimensional phononic crystals (PCs) formed by embedding cylindrical air holes in a solid plate (slab). The PC structure is made by etching a hexagonal array of air holes through a freestanding plate of silicon. A fabrication process compatible with metal-oxide-semiconductor technology is used on silicon-on-insulator substrate to realize the PC devices. Measuring the transmission of elastic waves through eight layers of the hexagonal lattice PC in the ΓK direction, more than 30 dB attenuation is observed at a high frequency; i.e., 134 MHz, with a band gap to midgap ratio of 23%. We show that this frequency region matches very well with the expected CPBG found through theoretical calculations

Phase-change materials (PCMs) offer a compelling platform for active metaoptics, owing to their large index contrast and fast yet stable phase transition attributes. Despite recent advances in phase-change metasurfaces, a fully integrable solution that combines pronounced tuning measures, i.e., efficiency, dynamic range, speed, and power consumption, is still elusive. Here, we demonstrate an in situ electrically driven tunable metasurface by harnessing the full potential of a PCM alloy, Ge2Sb2Te5 (GST), to realize non-volatile, reversible, multilevel, fast, and remarkable optical modulation in the near-infrared spectral range. Such a reprogrammable platform presents a record eleven-fold change in the reflectance (absolute reflectance contrast reaching 80%), unprecedented quasi-continuous spectral tuning over 250 nm, and switching speed that can potentially reach a few kHz. Our scalable heterostructure architecture capitalizes on the integration of a robust resistive microheater decoupled from an optically smart metasurface enabling good modal overlap with an ultrathin layer of the largest index contrast PCM to sustain high scattering efficiency even after several reversible phase transitions. We further experimentally demonstrate an electrically reconfigurable phase-change gradient metasurface capable of steering an incident light beam into different diffraction orders. This work represents a critical advance towards the development of fully integrable dynamic metasurfaces and their potential for beamforming applications.

We experimentally demonstrate a high resolution integrated spectrometer on silicon on insulator (SOI) substrate using a large-scale array of microdonut resonators. Through top-view imaging and processing, the measured spectral response of the spectrometer shows a linewidth of ~0.6 nm with an operating bandwidth of ~50 nm. This high resolution and bandwidth is achieved in a compact size using miniaturized microdonut resonators (radius ~2 μm) with a high quality factor, single-mode operation, and a large free spectral range. The microspectrometer is realized using silicon process compatible fabrication and has a great potential as a high-resolution, large dynamic range, light-weight, compact, high-speed, and versatile microspectrometer.

We demonstrate planar structures that can provide simultaneous two-dimensional phononic and photonic band gaps in opto-mechanical (or phoxonic) crystal slabs. Different phoxonic crystal (PxC) structures, composed of square, hexagonal (honeycomb), or triangular arrays of void cylindrical holes embedded in silicon (Si) slabs with a finite thickness, are investigated. Photonic band gap (PtBG) maps and the complete phononic band gap (PnBG) maps of PxC slabs with different radii of the holes and thicknesses of the slabs are calculated using a three-dimensional plane wave expansion code. Simultaneous phononic and photonic band gaps with band gap to midgap ratios of more than 10% are shown to be readily obtainable with practical geometries in both square and hexagonal lattices, but not for the triangular lattice.