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Results of irradiation experiments on a 0.6 m switched-capacitor analog array indicate a sudden recovery of the FPAA performance degradation during the irradiation phase. The main parameter considered to check the performance of the device is the total harmonic distortion of the processed analog signals. The observed recovery is associated with the compensating effects of oxide and interface trapped charge in the NMOS transistors of the array in a particular window of the accumulated dose received by the device. Experimental results are discussed and simulations performed to confirm the hypotheses for the observed phenomenon.Index Terms-Field programmable analog arrays (FPAAs), inactivity windows, radiation effects, total ionizing dose (TID).

Abstract-In this work the problem of Single Event Upset (SEU) is considered in a recent analog technology: The Field Programmable Analog Arrays (FPAAs). Some FPAA models are based on SRAM memory cells to implement the user programmability, which makes this kind of device vulnerable to SEU when employed in applications susceptible to the incidence of radiation. In the former part of this work some fault injection experiments are made in order to investigate the effects of SEU in the SRAM blocks of a commercial FPAA. For this purpose, single bit inversions are injected in the FPAA programming bitstream, when an oscillator module is programmed. In a second moment, a self-checking scheme using the studied FPAA is proposed. This scheme, which is built from the FPAA programming resources, is able to restore the original programming data if an error is detected. Fault injection is also performed to investigate the reliability of the proposed scheme when the bitstream section which controls the checker blocks is corrupted due to a SEU.Index Terms-Field programmable analog arrays, self-checking, self-recovering, single event upset.

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