2011
DOI: 10.1109/tns.2011.2172464
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TID in a Switched-Capacitor FPAA: Degradation and Partial Inactivity Windows Due to Compensating Effects in MOS Transistors

Abstract: Results of irradiation experiments on a 0.6 m switched-capacitor analog array indicate a sudden recovery of the FPAA performance degradation during the irradiation phase. The main parameter considered to check the performance of the device is the total harmonic distortion of the processed analog signals. The observed recovery is associated with the compensating effects of oxide and interface trapped charge in the NMOS transistors of the array in a particular window of the accumulated dose received by the devic… Show more

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Cited by 7 publications
(7 citation statements)
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“…Results are shown in Fig 20, in which the inactivity windows for the PMOS-DA architecture can be noticed. A similar behavior was observed in our practical radiation experiments [13].…”
Section: Frequency Performance On a Closed Loop Configurationsupporting
confidence: 89%
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“…Results are shown in Fig 20, in which the inactivity windows for the PMOS-DA architecture can be noticed. A similar behavior was observed in our practical radiation experiments [13].…”
Section: Frequency Performance On a Closed Loop Configurationsupporting
confidence: 89%
“…It was observed a sudden recovery of the THD during a specific window of the irradiation phase. This fail-recovery pattern may be associated to partial inactivity windows in the analog switches of the device as well as in the device OpAmps, as described in [13] and firstly observed in [14] on irradiated commercial analog switches.…”
Section: A Previous Workmentioning
confidence: 72%
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