2012 13th Latin American Test Workshop (LATW) 2012
DOI: 10.1109/latw.2012.6261255
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Impact of TID-induced threshold deviations in analog building-blocks of operational amplifiers

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Cited by 3 publications
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“…There are two predominant factors that have the potential to cause the threshold voltage shift, namely the total ionizing dose (TID) and the aging effects. It is well known that the parameters of CMOS transistors may be influenced by TID [23]- [25]. As the radiation-induced trapped charge builds up in the gate oxide, the threshold voltage of the transistor will be shifted gradually.…”
Section: B the Threshold Shift Of The Invertermentioning
confidence: 99%
“…There are two predominant factors that have the potential to cause the threshold voltage shift, namely the total ionizing dose (TID) and the aging effects. It is well known that the parameters of CMOS transistors may be influenced by TID [23]- [25]. As the radiation-induced trapped charge builds up in the gate oxide, the threshold voltage of the transistor will be shifted gradually.…”
Section: B the Threshold Shift Of The Invertermentioning
confidence: 99%