Articles you may be interested inPattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal-oxide-semiconductor field-effect transistors A new method for silicon-on-insulator ͑SOI͒ is presented that has very few stacking fault defects and produces multiple layers of single crystal silicon surrounded by thermal SiO 2 . The technique requires selective epitaxial growth, epitaxial lateral overgrowth, and chemical mechanical planarization to form SOI islands stacked in multiple layers. Islands of silicon as small as 150ϫ150ϫ40 nm thick were fabricated. Larger SOI islands in two SOI layers, with grown vertical interconnections between layers, were 5ϫ500ϫ0.1 m. Only one stacking fault was observed in 85 000 m 2 of the first layer and none in the second layer. P-channel metal-oxide-semiconductor field effect transistors with gate lengths of less than ϳ100 nm were fabricated in the thin SOI islands. They had normal current-voltage plot characteristics with less than 0.2 pA/m of leakage current, illustrating the quality of the material in both SOI layers and at the silicon to thermal-oxide interfaces. The devices had measured subthreshold slopes of 76 mV/decade and good saturated current drives.
Silicon Selective Epitaxial Growth (SEG) and EpitaxialLateral Overgrowth provide a technology for fabricating thin SO1 device islands, fully self-aligned double gate SO1 MOSFETs and multiple layers of SO1 devices. Sub-micron P-MOSFETs in 2 SO1 layers of SO1 islands and the doublegate fully-depleted devices show low off currents < 0.2pA/pm with low vlaues of sub-threshold slopes (dOmV/dec).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.