This letter presents a novel test structure to accurately extract the substrate network parameters for RF MOSFET modeling from two-port measurements. The test structure used in the common-gate configuration isolates the gate network to make the substrate network distinctly accessible to measurements. A methodology is developed to directly extract the substrate network from the measured data. The method is further verified and validated by the excellent match obtained between measured and simulated two-port parameters.Index Terms-CMOS RF Modeling, RF MOSFET parameter extraction, substrate resistance, substrate network.
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