The gate length dependencies of the optical response characteristics in the optically controlled MOSFET have measured. This device was the integrated structure ofabsorption region and MOSFET region by using direct wafer bonding technique. By reducing the gate length ofMOSFET region, the transconductance of FET channel was increased, and we obtained high current modulation and responsivity by irradiation of 1.5 jim wavelength light.
The gate-length dependencies of the optical response characteristics in an optically
controlled metal oxide semiconductor field effect transistor (MOSFET) have been measured. This device was fabricated as an integrated
structure of the absorption region and MOSFET region using the direct wafer-bonding
technique. By reducing the gate length of the MOSFET region, the transconductance of
the FET channel was increased, and a high current modulation and responsivity was
obtained by irradiation of 1.5 µm wavelength light.
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