Abstract:The gate-length dependencies of the optical response characteristics in an optically
controlled metal oxide semiconductor field effect transistor (MOSFET) have been measured. This device was fabricated as an integrated
structure of the absorption region and MOSFET region using the direct wafer-bonding
technique. By reducing the gate length of the MOSFET region, the transconductance of
the FET channel was increased, and a high current modulation and responsivity was
obtained by irradiation of … Show more
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