In the gate recess etching of O.1pm gate HEMT process, the anomalous phenomenon caused by electrochemical etching was found. The isolation region implanted with oxygen ion was etched more deeply than the channel region, which caused a non-flat etched surface. This anomaly effects seriously on the device performaince and its uniformity. We suppressed the anomaly by optimizing the condition of the isolation and the pattern of the device. Flat etched surface was achieved and uniform device characteristics was obtained.
The gate-length dependencies of the optical response characteristics in an optically
controlled metal oxide semiconductor field effect transistor (MOSFET) have been measured. This device was fabricated as an integrated
structure of the absorption region and MOSFET region using the direct wafer-bonding
technique. By reducing the gate length of the MOSFET region, the transconductance of
the FET channel was increased, and a high current modulation and responsivity was
obtained by irradiation of 1.5 µm wavelength light.
The gate length dependencies of the optical response characteristics in the optically controlled MOSFET have measured. This device was the integrated structure ofabsorption region and MOSFET region by using direct wafer bonding technique. By reducing the gate length ofMOSFET region, the transconductance of FET channel was increased, and we obtained high current modulation and responsivity by irradiation of 1.5 jim wavelength light.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.