High current modulation in optically controlled MOSFET using directly-bonded SiO/sub 2/-InP

Optically-gated Non-latched High Gain Power Device

“…On the other hand, research on optical modulation and control of other conventional electrical devices like MOSFET [11,12], MESFET [13][14][15], or HEMT [16] have primarily concentrated on microwave systems, low-power signal detection, and optical communication applications which have different requirements from power semiconductor devices and associated power electronics applications. The common feature of these works is that optical signal was applied to modulate steady-state properties such as I-V characteristic [11,12,14], RC time constant [15], RF s-parameters [13], or pinch-off voltage [16] which are very important from the corresponding application area point of view but do not cover the direct modulation aspects of switching properties like rise and fall time, which are important in power electronics applications. Moreover, modulations are reported mainly with respect to the power of the optical signal and not on optical wavelength.…”