Novel integrated photodetector on Si LSI circuits. Optically controlled MOSFET

Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate

“…A Si metal-oxide-semiconductor field-effect transistor (MOSFET) with a GaInAs-InP absorption region on the gate has been reported to act as an integrated photodetector. 1) The on-off ratio of the MOSFET increases slowly with increasing input light power, and the maximum value is 3.5 dB. In contrast, the on-off ratio of the MOS tunneling diode with the Al grid gate rapidly increases at the threshold opticalpower density, and the maximum value is more than 20 dB.…”

“…Figure 3 shows the relationship between the on-off ratio and P in when V G is À2 V. The on-off ratio was calculated from the ratio of the current densities under light irradiation and no light irradiation as 1) 10 log 10…”

“…Recently, interest in using optical technology has increased as a means of improving the connection of devices on a single chip and the connection between chips or modules. 1) In electrical systems, the current logic circuit is generally formed on a silicon (Si) substrate, and this trend will continue. Optical devices are preferably integrated on Si substrates.…”

Transfer of InP epilayers by wafer bonding

“…[15,16]: Material such as Si forms a highquality Si/SiO 2 structure when oxidized at high temperatures. This is not the case for III-V compound semiconductors.…”

Low temperature InP∕Si wafer bonding using boride treated surface

“…1,2,4 However, high temperature annealing may cause serious problems such as defect diffusion, dopant diffusion, and introduction of large thermal stress. The stress would limit the size of the bonded sample and even cause debonding.…”