Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate

The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

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“…Hence, there was a second plateau of the photocurrent. A similar phenomenon was observed by Hashimoto et al [ 51 ].…”

Section: Mis Visible-to-near-ir Photodetectorssupporting

confidence: 88%

Metal-Insulator-Semiconductor Photodetectors

Lin

2010

Sensors

158

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“…Under illumination, the accumulation of positive charge in the valence band at the Si 3 N 4 /Si top interface decreases the surface potential and increases the oxide voltage. The modified band diagrams shown by the red dotted lines in Figure 6c,d provide evidence of a reduced barrier resulting in enhanced tunneling [60]. This accounts for the steeper increase of the current under illumination observed for V < −6.5 V. In this voltage range, being normalV≤−6EG/q, this is the threshold used in the Si one-sided junction for the avalanche breakdown when impact ionization might also occur, contributing to the photocurrent gain.…”

Section: Resultsmentioning

confidence: 99%

Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes

Bartolomeo

Giubileo²,

Grillo

et al. 2019

Nanomaterials

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Metal-insulator-semiconductor-insulator-metal (MISIM) heterostructures, with rectifying current-voltage characteristics and photosensitivity in the visible and near-infrared spectra, are fabricated and studied. It is shown that the photocurrent can be enhanced by adding a multi-walled carbon nanotube film in the contact region to achieve a responsivity higher than 100 mA W−1 under incandescent light of 0.1 mW cm−2. The optoelectrical characteristics of the MISIM heterostructures are investigated at lower and higher biases and are explained by a band model based on two asymmetric back-to-back Schottky barriers. The forward current of the heterojunctions is due to majority-carrier injection over the lower barrier, while the reverse current exhibits two different conduction regimes corresponding to the diffusion of thermal/photo generated carriers and majority-carrier tunneling through the higher Schottky barrier. The two conduction regimes in reverse bias generate two plateaus, over which the photocurrent increases linearly with the light intensity that endows the detector with bias-controlled photocurrent.

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Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate

Cited by 2 publications

References 18 publications

Metal-Insulator-Semiconductor Photodetectors

Metal-Insulator-Semiconductor Photodetectors

Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes

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