High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO₂-InP

Photonic power electronics: Past, present, and future

“…However, optical switching of power MOSFETs has not been studied much. Optical control of MOSFET or MIS structure, in general, has been reported in [18], [19]. But, they are primarily in the domain low-power optical communication or sensor applications.…”

Optically-gated Non-latched High Gain Power Device

“…On the other hand, research on optical modulation and control of other conventional electrical devices like MOSFET [11,12], MESFET [13][14][15], or HEMT [16] have primarily concentrated on microwave systems, low-power signal detection, and optical communication applications which have different requirements from power semiconductor devices and associated power electronics applications. The common feature of these works is that optical signal was applied to modulate steady-state properties such as I-V characteristic [11,12,14], RC time constant [15], RF s-parameters [13], or pinch-off voltage [16] which are very important from the corresponding application area point of view but do not cover the direct modulation aspects of switching properties like rise and fall time, which are important in power electronics applications. Moreover, modulations are reported mainly with respect to the power of the optical signal and not on optical wavelength.…”

Transfer of InP epilayers by wafer bonding

“…[15,16]: Material such as Si forms a highquality Si/SiO 2 structure when oxidized at high temperatures. This is not the case for III-V compound semiconductors.…”