AlGaAs/GaAs/AlGaAs double-heterostructures having two-dimensional electron and hole channels at the respective interfaces are studied by measuring their photocurrent and photoluminescence characteristics. Under the weak photoexcitation, it is found that photo-generated electrons and holes are driven by a built-in electric field between the two channels and flow out mostly as a photocurrent to the respective electrodes, making the photoluminescence negligibly small. When the excitation reaches a certain level, some of photo-generated electrons and holes accumulate in each channel and weaken the built-in field, leading to an exponential increase in photoluminescence or the radiative recombination of electrons and holes. When the excitation gets strong, photo-generated carriers are lost mostly in the form of photoluminescence, resulting in the saturation of photocurrent. A theoretical model to explain these findings is presented. A possibility of using this type of study to clarify operating mechanisms of super-junction devices is suggested.
Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III-V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product R ON ⋅A of their on-resistance R ON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on-resistance R ON ⋅A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of R ON ⋅A for HSJ devices can be lower than that of Siinsulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN-based HSJ devices but also GaAs-based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.
K E Y W O R D Sheterojunction, III-V semiconductors, lateral power devices, superjunction devices Electron Comm Jpn. 2019;102:33-38.
Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III‐V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product RON·A of their on‐resistance RON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on‐resistance RON·A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of RON·A for HSJ devices can be lower than that of Si‐insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN‐based HSJ devices but also GaAs‐based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.
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