Photocurrent and photoluminescence characteristics of AlGaAs/GaAs double-heterostructures with a pair of two-dimensional electron and hole channels

Kushida, T.; Ohmori, Masato; Sakaki, H.

doi:10.1063/1.5001507

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…Therefore, attention is paid to the SJ devices using compound semiconductors such as GaAs and GaN, which possess better physical properties than Si. [6][7][8][9][10] Since GaAs has a larger bandgap and higher electron mobility, devices with high V B and low R on can be realized. [6][7][8] Also, the SJ devices using GaN attract much attention to further improve the trade-offs.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9][10] Since GaAs has a larger bandgap and higher electron mobility, devices with high V B and low R on can be realized. [6][7][8] Also, the SJ devices using GaN attract much attention to further improve the trade-offs. 9,10) With heterojunctions using GaN and AlGaN, two-dimensional carrier gas can be generated by the polarization effects.…”

Section: Introductionmentioning

confidence: 99%

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Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Kawata

Zhang

Iwata

2022

Jpn. J. Appl. Phys.

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Breakdown voltage enhancement was studied for p-GaN/AlGaN/GaN heterostructure diodes, where residual Si donors during growth were compensated with Mg acceptors doped in the p-GaN layer. As decreasing of the p-GaN layer thicknesses (Tp-GaN) from 140 nm, breakdown voltages were increased, and maximized at 20 nm, then decreased at 0 nm. And, breakdown voltages of the 20 nm Tp-GaN diodes improved with increase of the drift region lengths. This is because a uniform electric field was obtained by compensation of the residual Si donors with the Mg acceptors. In addition, for a thicker p-GaN layer, the effects of the surface states were suppressed, and injection of a large number of holes under forward bias was observed. Consequently, the thick p-GaN layer is expected to enhance forward current. Adopting the results, potential of low on-resistance and high current for p-GaN gated anode diodes was demonstrated.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Kawata

Zhang

Iwata

2022

Jpn. J. Appl. Phys.

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“…We have been studying on AlGaAs/GaAs/AlGaAs heterostructure transistors and diodes with a pair of hole and electron channels. [16][17][18][19][20][21] The transistors with the same doping concentrations of acceptor and donor demonstrated the current modulation characteristics. The diode, however, did not show a sufficiently high BV, that is, the average electric field was much lower than the critical field of GaAs.…”

Section: Introductionmentioning

confidence: 99%

High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels

Ogawa

Kawata

Iwata

2021

Jpn. J. Appl. Phys.

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High breakdown voltage (BV) AlGaAs/GaAs/AlGaAs diodes with a pair of hole and electron channels were studied taking account of the residual carbon impurity. The residual acceptor that would affect the charge balance was evaluated by separate growth. Utilizing the residual concentration, the acceptor concentrations (N A) were examined with a fixed donor concentration of 1.1 × 1012 cm−2. For N A of 0.9 × 1012 cm−2, the diode with 113 μm drift region length derived the highest BV of 1800 V. Temperature-dependent I–V measurements revealed the breakdown due to an avalanche multiplication. This implies a uniform electric field across the channels. Then, depletion of both channels was characterized by C–V measurements for obtaining capacitance shut-off voltages of the diodes. The lowest shut-off voltage was obtained for the 0.9 × 1012 cm−2 N A diode. This would be due to the simultaneous depletion of hole and electron channels, i.e. the identical net concentration for acceptor and donor.

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2D/1D MoS₂/TiO₂ Heterostructure Photocatalyst with a Switchable CO₂ Reduction Product

et al. 2022

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climate change. [1] Thus, there is an acute need to develop green technologies for converting solar energy into pure chemical energy that could reduce the greenhouse effect and alleviates the global energy crunch. [2] Photocatalytic CO 2 reduction into CO or economic hydrocarbon fuel like methane (CH 4 ), as well as photoelectrochemical water splitting into a zerocarbon emission fuel (H 2 production) are promising ways to convert and store solar energy. [2c,3] Semiconductor nanoparticles have gained interest in the fields of photocatalysis, water splitting, and energy conservation and conversion. [2b,3c,4] Among them, titanium oxide has played a significant role in efficiently mitigating air and water pollution problems due to its excellent optoelectronic properties and long-term photostability. [2c,4-7] Yet, the inappropriate large energy band gap, high electron-hole recombination, and unfavorably low solar light consumption have hindered the photoconversion efficiency of the pristine TiO 2 semiconductor. [2c,4b,8] Heterostructuring TiO 2 with an appropriate semiconductor is an operative approach to overcome its drawbacks and construct an efficient photocatalyst. [2c,4a,8] MoS 2 is an appealing semiconductor for fabricating heterostructured Regulating the transfer pathway of charge carriers in heterostructure photocatalysts is of great importance for selective CO 2 photoreduction. Herein, the charge transfer pathway and in turn the redox potential succeeded to regulate in 2D MoS 2 /1D TiO 2 heterostructure by varying the light wavelength range. Several in situ measurements and experiments confirm that charge transfer follows either an S-scheme mechanism under simulated solar irradiation or a heterojunction approach under visible light illumination, elucidating the switchable property of the MoS 2 /TiO 2 heterostructure. Replacing the simulated sunlight irradiation with the visible light illumination switches the photocatalytic CO 2 reduction product from CO to CH 4.13 CO 2 isotope labeling confirms that CO 2 is the source of carbon for CH 4 and CO products. The photo electrochemical H 2 generation further supports the switching property of MoS 2 /TiO 2 . Unlike previous studies, density functional theory calculations are used to investigate the band structure of Van der Waals MoS 2 /TiO 2 S scheme after contact, allowing to propose accurate charge transfer pathways, in which the theoretical results are well matched with the experimental results. This work opens the opportunity to develop photocatalysts with switchable charge transport and tunable redox potential for selective artificial photosynthesis.

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Photocurrent and photoluminescence characteristics of AlGaAs/GaAs double-heterostructures with a pair of two-dimensional electron and hole channels

Cited by 4 publications

References 14 publications

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels

2D/1D MoS₂/TiO₂ Heterostructure Photocatalyst with a Switchable CO₂ Reduction Product

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Photocurrent and photoluminescence characteristics of AlGaAs/GaAs double-heterostructures with a pair of two-dimensional electron and hole channels

Cited by 4 publications

References 14 publications

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels

2D/1D MoS2/TiO2 Heterostructure Photocatalyst with a Switchable CO2 Reduction Product

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2D/1D MoS₂/TiO₂ Heterostructure Photocatalyst with a Switchable CO₂ Reduction Product