Abstract:Breakdown voltage enhancement was studied for p-GaN/AlGaN/GaN heterostructure diodes, where residual Si donors during growth were compensated with Mg acceptors doped in the p-GaN layer. As decreasing of the p-GaN layer thicknesses (Tp-GaN) from 140 nm, breakdown voltages were increased, and maximized at 20 nm, then decreased at 0 nm. And, breakdown voltages of the 20 nm Tp-GaN diodes improved with increase of the drift region lengths. This is because a uniform electric field was obtained by compensation of the… Show more
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