Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

Abstract

Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III-V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product R ON ⋅A of their on-resistance R ON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on-resistance R ON ⋅A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of R ON ⋅A for HSJ devices can be lower than that of Siinsulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN-based HSJ devices but also GaAs-based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures. K E Y W O R D Sheterojunction, III-V semiconductors, lateral power devices, superjunction devices Electron Comm Jpn. 2019;102:33-38.

High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels

“…We have been studying on AlGaAs/GaAs/AlGaAs heterostructure transistors and diodes with a pair of hole and electron channels. [16][17][18][19][20][21] The transistors with the same doping concentrations of acceptor and donor demonstrated the current modulation characteristics. The diode, however, did not show a sufficiently high BV, that is, the average electric field was much lower than the critical field of GaAs.…”