Low-loss high-power static induction thyristors for complementary circuits

Kushida, T.; Tadano, Hiroshi; Hashimoto, Shinji; Takigawa, M.; Igarashi, Isemi; Nishizawa, Jun–ichi

doi:10.1109/28.87263

Cited by 4 publications

(1 citation statement)

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“…(5) The source region and channel stopper ring are formed by phosphorus diffusion on a large area at 1150 ı C for 30 min, the diffusion depth is about 1.5 m, and R D 3 = . (6) The back sides of the wafers are oxidized and etched using the masking with strip shapes, then boron with high concentration of 10 19 cm 3 is diffused into the strip shapes to form strip anode region, the back n epitaxial layer without doping is just the leakage anode region, the width of strip anode region W sa is about 10 m and that of leakage anode region W la varies from about 2 to 8 m. (7) The Al-Ti-Pt metal electrodes of cathode, gate, anode are prepared by evaporation, sputtering and selective etching.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

A new static induction thyristor with high forward blocking voltage and excellent switching performances

et al. 2010

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A new static induction thyristor (SITH) with a strip anode region and p buffer layer structure (SAP B) has been successfully designed and fabricated. This structure is composed of a p buffer layer and lightly doped n regions embedded in the p C -emitter. Compared with the conventional structure of a buried-gate with a diffused source region (DSR buried-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-off time decreased from 0.8 to 0.4 s.

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Section: Device Structure and Fabricationmentioning

confidence: 99%