Based on World Health Organization (WHO)'s definition of Quality of Life (QOL) and programmed decision procedures, we developed a general module of the System of Quality of Life Instruments for Cancer Patients (QLICP-GM) utilizing focus group discussions, pilot tests of 448 cases and field tests of 600 cases of 5 different cancer patients. The number of items in the final version was reduced to 32 from a 78-item pool. The psychometric properties of the scale were evaluated by indicators such as validity and reliability coefficients, SRM, and statistical methods of correlational analysis, t tests, and structural equation modeling. Correlational and structural equation model analyses indicate good construct validity with RMSEA 0.086, NNFI 0.947 and CFI 0.961. Good criterion-related validity was found when FACT-G was used as the criterion. The test-retest reliability for all domains and the overall scale is above 0.85; the internal consistency a for each domain is higher than 0.70 except of the social function; a and the split-half reliability of the overall scale is 0.88 and 0.93, respectively. The pre-post changes of QOL scores are of statistical significances in 3 domains of physical function, psychological function, common symptoms and side effects, and the overall instrument, with standardized response mean ranging from 0.16 to 0.67. Equivalence tests showed nonequivalence on quality of life score changes of these domains and the overall instrument. Our study shows that the QLICP-GM has good validity, reliability, responsiveness, and can be used as the general module for cancer patients in China. ' 2007 Wiley-Liss, Inc.
Doping a low-bandgap polymer material (PDTBDT-DTNT) as a complementary electron donor in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C 61 -butyricacid methyl ester (PC 61 BM) blend is experimented to improve the power conversion efficiency (PCE) of organic solar cells (OSCs).The PCE of OSCs was increased from 3.19% to 3.75% by doping 10 wt% PDTBDT-DTNT, which was 17.55% higher than that of the OSCs based on binary blend of P3HT:PC 61 BM (host cells).The short-circuit current density (J sc ) was increased to 10.11 mA·cm −2 compared with the host cells. Although the PCE improvement could partly be attributed to more photon harvest for complementary absorption of 2 donors by doping appropriate PDTBDT-DTNT, the promotion of charge separation and transport as well as the suppression of charge recombination due to a matrix of cascade energy levels is also important. And the better morphology of the active layer films is beneficial to the optimized performance of ternary devices.
The radiation-hardened performances of static induction transistor (SIT) have been studied in depth in this paper. The effects of radiation of electron beam on the I-V characteristics, carrier distribution and potential distribution in the channel of SIT have been represented. A large number of electron-hole pairs are generated in the depletion region of reversely biased gate-channel PN junction. The radiation-generated electrons drift towards the drain region at high positive potential, while generated holes flow into gate region biased to the lowest potential. With the accumulation of holes in gate region, the gate potential is boosted, resulting in a decrease in the height of potential barrier in channel, and an increase in drain current. I-V characteristics of SIT in the presence of radiation have been theoretically derived, and compared with experimental results. With the increase in thickness of epitaxial layer, the radiation-hardened capability of SIT is continuously improved until the optimum thickness of 26 µm is reached. The optimum matching relationship among geometric, material and technological parameters has been represented to acquire excellent radiation-hardened performances of SIT.
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