Possibility of reducing the on‐resistance in 1 kV‐class lateral superjunction power devices based on III‐V semiconductors

Abstract

Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III‐V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product RON·A of their on‐resistance RON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on‐resistance RON·A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of RON·A for HSJ devices can be lower than that of Si‐insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN‐based HSJ devices but also GaAs‐based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.