Electrical Characteristics of AlGaAs/GaAs Heterostructures With a Pair of 2-D Electron and Hole Channels

Kushida, T.; Ohmori, Masato; Osanai, Shota; Kawamoto, Daisuke; Noda, Takeshi; Sakaki, H.

doi:10.1109/ted.2015.2474735

Cited by 9 publications

(5 citation statements)

References 12 publications

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“…Therefore, attention is paid to the SJ devices using compound semiconductors such as GaAs and GaN, which possess better physical properties than Si. [6][7][8][9][10] Since GaAs has a larger bandgap and higher electron mobility, devices with high V B and low R on can be realized. [6][7][8] Also, the SJ devices using GaN attract much attention to further improve the trade-offs.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9][10] Since GaAs has a larger bandgap and higher electron mobility, devices with high V B and low R on can be realized. [6][7][8] Also, the SJ devices using GaN attract much attention to further improve the trade-offs. 9,10) With heterojunctions using GaN and AlGaN, two-dimensional carrier gas can be generated by the polarization effects.…”

Section: Introductionmentioning

confidence: 99%

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Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Kawata

Zhang

Iwata

2022

Jpn. J. Appl. Phys.

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Breakdown voltage enhancement was studied for p-GaN/AlGaN/GaN heterostructure diodes, where residual Si donors during growth were compensated with Mg acceptors doped in the p-GaN layer. As decreasing of the p-GaN layer thicknesses (Tp-GaN) from 140 nm, breakdown voltages were increased, and maximized at 20 nm, then decreased at 0 nm. And, breakdown voltages of the 20 nm Tp-GaN diodes improved with increase of the drift region lengths. This is because a uniform electric field was obtained by compensation of the residual Si donors with the Mg acceptors. In addition, for a thicker p-GaN layer, the effects of the surface states were suppressed, and injection of a large number of holes under forward bias was observed. Consequently, the thick p-GaN layer is expected to enhance forward current. Adopting the results, potential of low on-resistance and high current for p-GaN gated anode diodes was demonstrated.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Kawata

Zhang

Iwata

2022

Jpn. J. Appl. Phys.

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“…We have been studying on AlGaAs/GaAs/AlGaAs heterostructure transistors and diodes with a pair of hole and electron channels. [16][17][18][19][20][21] The transistors with the same doping concentrations of acceptor and donor demonstrated the current modulation characteristics. The diode, however, did not show a sufficiently high BV, that is, the average electric field was much lower than the critical field of GaAs.…”

Section: Introductionmentioning

confidence: 99%

High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels

Ogawa

Kawata

Iwata

2021

Jpn. J. Appl. Phys.

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High breakdown voltage (BV) AlGaAs/GaAs/AlGaAs diodes with a pair of hole and electron channels were studied taking account of the residual carbon impurity. The residual acceptor that would affect the charge balance was evaluated by separate growth. Utilizing the residual concentration, the acceptor concentrations (N A) were examined with a fixed donor concentration of 1.1 × 1012 cm−2. For N A of 0.9 × 1012 cm−2, the diode with 113 μm drift region length derived the highest BV of 1800 V. Temperature-dependent I–V measurements revealed the breakdown due to an avalanche multiplication. This implies a uniform electric field across the channels. Then, depletion of both channels was characterized by C–V measurements for obtaining capacitance shut-off voltages of the diodes. The lowest shut-off voltage was obtained for the 0.9 × 1012 cm−2 N A diode. This would be due to the simultaneous depletion of hole and electron channels, i.e. the identical net concentration for acceptor and donor.

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“…devices), (2) devices with superjunctions (SJ), 2,3 and (3) devices with hetero superjunctions (HSJ). [4][5][6][7][8][9] Particularly, GaAs lateral HSJ devices that were considered unsuitable for high voltage applications are shown to promise excellent characteristics.…”

Section: Introductionmentioning

confidence: 99%

Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

Kushida

Sakaki

2019

IEEJ Trans.EIS

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Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III-V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product R ON ⋅A of their on-resistance R ON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on-resistance R ON ⋅A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of R ON ⋅A for HSJ devices can be lower than that of Siinsulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN-based HSJ devices but also GaAs-based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures. K E Y W O R D Sheterojunction, III-V semiconductors, lateral power devices, superjunction devices Electron Comm Jpn. 2019;102:33-38.

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Electrical Characteristics of AlGaAs/GaAs Heterostructures With a Pair of 2-D Electron and Hole Channels

Cited by 9 publications

References 12 publications

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels

Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

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