Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Structure and optical band gap of ZnO1−xSx thin films synthesized by chemical spray pyrolysis for application in solar cells J. Appl. Phys. 112, 063708 (2012) Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films J. Appl. Phys. 112, 064111 (2012) Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells Structural, optical, and electrical properties of thin films of Znx Cd l _ x S (O<;x<; 1.0) prepared by the solution-growth technique are reported as a function of x. As-grown films are composed of a hexagonal phase in the range O<;x<;O.8 and of cubic phase for x = 1.0. The lattice parameters a and c vary with x following Vegard's law. The band gaps for as-grown ZnxCd j _xS films are found to vary linearly with x from 2.40 eV for CdS to 3.6 eV for ZnS.The resistivity increases from 10 9 to 10 12 n cm in the whole range O<;x<; LO. The effect of indium doping and H2 annealing on the above properties is also investigated.

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