Studies on solution-grown thin films of ZnxCd1−xS

Abstract

Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Structure and optical band gap of ZnO1−xSx thin films synthesized by chemical spray pyrolysis for application in solar cells J. Appl. Phys. 112, 063708 (2012) Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films J. Appl. Phys. 112, 064111 (2012) Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells Structural, optical, and electrical properties of thin films of Znx Cd l _ x S (O<;x<; 1.0) prepared by the solution-growth technique are reported as a function of x. As-grown films are composed of a hexagonal phase in the range O<;x<;O.8 and of cubic phase for x = 1.0. The lattice parameters a and c vary with x following Vegard's law. The band gaps for as-grown ZnxCd j _xS films are found to vary linearly with x from 2.40 eV for CdS to 3.6 eV for ZnS.The resistivity increases from 10 9 to 10 12 n cm in the whole range O<;x<; LO. The effect of indium doping and H2 annealing on the above properties is also investigated.

Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

“…It is seen that the room temperature resistivity 1.62 × 10 5 cm of pure CdS 0.2 Se 0.8 thin film decreases with increase in indium doping concentration from 0.0 to 0.15 mol% to 3.71 × 10 4 cm and then again increases for higher doping concentrations to 1.05 × 10 5 cm for 1.0 mol%. Similar results have been reported earlier for doped and mixed thin films [30,31]. The decrease in resistivity with increase in indium doping concentration up to 0.15 mol% can be explained as follows: Incorporation of indium in the host structure (CdS 0.2 Se 0.8 ) has two possibilities; (1) substitution of divalent cadmium by a trivalent indium and (2) possibility of formation of Cd-vacancies.…”

Synthesis of solid solutions of Cd1−xZnxS nanocrystals in the channels of mesostructured silica films

“…36 The two ends of the series, the Cd(II) rich and Zn(II) rich ends, show extra deviations, most likely due to the variation in particle size. Recently, Sapra and Sarma 37 evaluated the electronic structure of II-VI semiconductor nanocrystals (between 5 and 80 Å ) using a modified tight-binding model (TBM), developed by the same group, for bulk II-VI semicoductors.…”

CBD‐Cd1−xZnxS thin films and their application in CdTe solar cells

“…The film composition after sputtering 3.4 min is listed in Table 1. The bandgap can be estimated from the empirical expression [13]:…”