Stable and brightly luminescent amine-terminated Si nanoparticles (SiNPs) have been synthesized from electrochemically etched porous silicon (PSi). The surface amine termination was confirmed by FTIR, NMR, and XPS studies. The mean diameter of the crystal core of 4.6 nm was measured by transmission electron microscopy (TEM), which is in a good agreement with the size obtained by dynamic light scattering (DLS). The dry, amine-terminated product can be obtained from bulk silicon wafers in less than 4 h. This represents a significant improvement over similar routines using PSi where times of >10 h are common. The emission quantum yield was found to be about 22% and the nanoparticles exhibited an exceptional stability over a wide pH range (4-14). They are resistant to aging over several weeks. The amine-terminated SiNPs showed no significant cytotoxic effects toward HepG2 cells, as assessed with MTT assays.

Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Structure and optical band gap of ZnO1−xSx thin films synthesized by chemical spray pyrolysis for application in solar cells J. Appl. Phys. 112, 063708 (2012) Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films J. Appl. Phys. 112, 064111 (2012) Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells Structural, optical, and electrical properties of thin films of Znx Cd l _ x S (O<;x<; 1.0) prepared by the solution-growth technique are reported as a function of x. As-grown films are composed of a hexagonal phase in the range O<;x<;O.8 and of cubic phase for x = 1.0. The lattice parameters a and c vary with x following Vegard's law. The band gaps for as-grown ZnxCd j _xS films are found to vary linearly with x from 2.40 eV for CdS to 3.6 eV for ZnS.The resistivity increases from 10 9 to 10 12 n cm in the whole range O<;x<; LO. The effect of indium doping and H2 annealing on the above properties is also investigated.

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