Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

Yadav, Abhijit A.; Barote, M.A.; Chavan, Tejashri; Masumdar, E.U.

doi:10.1016/j.jallcom.2010.09.130

Cited by 30 publications

(6 citation statements)

References 26 publications

(37 reference statements)

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“…Figure 11 shows resistivity of the prepared samples vs temperature which supply information on the flow of charge carriers in the SnO 2 nanostructures. It can be seen that the resistivity decreases as the temperature rises which is a common characteristic of semiconductors [47]. As the temperature range was adjusted from 50 • C to 500 • C, all resistance values decreased due to thermally activated charge carrier and their drift mobility.…”

Section: Resultsmentioning

confidence: 92%

Characterization of Zn doped SnO₂ thin films prepared by the SILAR technique for optoelectronic applications

Güldüren¹

2021

Semicond. Sci. Technol.

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In the present study, pure and zinc (Zn) doped tin oxide (SnO 2 ) thin films were grown by successive ionic layer adsorption and reaction method on the soda lime glass slides at 293 K. The prepared samples were examined to observe the impact of Zn doping on structural, morphological, electrical, and optical properties of SnO 2 crystal lattice. The x-ray diffractometer (XRD), ultraviolet-visible spectrometer, energy dispersive x-ray analysis (EDAX), scanning electron microscope (SEM), Raman, x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra measurements were conducted. And, two probe detection method was applied to find the shift in resistance values corresponding to varying temperatures. The XRD results depicted that the prepared thin films have the tetragonal rutile structure. The surface morphologies were observed to be affected by the changing concentrations of Zn doping. The EDAX evaluation exposed the existence of Zn ions in the prepared samples in addition to Sn and O. Resistivity vs temperature (r-t) measurements exhibited that all the samples possess the common 'r-t' characteristics of semiconductors. The XPS results uncovered the fact that the binding energy of SnO 2 nanostructures was decreased by 0.9 eV due to the existence of Zn ions. It was also found out that the band gaps, calculated by using the absorption measurements, can be tuned from 2.02 eV to 2.50 eV by the different rates of Zn dopants in the SnO 2 nanostructures. The Raman spectras of pure SnO 2 and Zn doped SnO 2 (Zn:SnO 2 ) samples gave three peaks that were in the range of 490 cm −1 , 580 cm −1 and 620 cm −1 for each peak separately. The PL spectra displayed that the emission intensity decreased with the introduction of impurities into the SnO 2 lattice.

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Section: Resultsmentioning

confidence: 92%

Characterization of Zn doped SnO₂ thin films prepared by the SILAR technique for optoelectronic applications

Güldüren¹

2021

Semicond. Sci. Technol.

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“…The glass plates with dimensions 75×26 mm were used for the deposition of CdO thin film sample. The glass plates were washed in chromic acid, alcohol, and distilled water before the deposition of the film sample [22]. For that, the solution of 0.25 M cadmium monochloro acetate was prepared by dissolving cadmium carbonate in an equivalent solution of 0.25 M monochloroacetic acid solution (pKa = 1.25 at 25 °C) with constant stirring.…”

Section: Methodsmentioning

confidence: 99%

Photodegradation of Rhodamine-B Dye under Natural Sunlight using CdO

Lavate

Sawant

Khomane

2022

Bull. Chem. React. Eng. Catal.

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The present study includes synthesis of CdO thin film by simple and cost effective chemical bath deposition method. Cadmium monochloroaceatate were used for preparation of CdO thin film. The structural, optical properties of CdO thin film were investigated with the help of X-ray diffraction (XRD) and UV-Vis NIR double beam spectrometry. The XRD studies revealed that annealed thin film shows crystalline in nature having 48.4 nm in size. The optical band gap of thin film was found to be 2.13 eV. Scanning Electron Microscopy (SEM) images shows sphere like structure which is closely arranged with each other. The presence of functional group was confirmed by Fourier Transform Infra Red (FTIR). Brunauer–Emmett–Teller (BET) surface area analysis confirm formation of a mesoporous CdO with 6.01 m2/g surface area and 31.96 nm average pore diameter. The photocatalytic activity of prepared thin film was checked by using Rhodamine-B as a model dye under natural sunlight and found to be 48%. Copyright © 2022 by Authors, Published by BCREC Group. This is an open access article under the CC BY-SA License (https://creativecommons.org/licenses/by-sa/4.0).

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“…It is found that as the thickness increases, crystallinity (peak intensity of (200) The reflection intensities for each peak contains the information being related to the preferential or random growth of polycrystalline antimony doped SnO 2 thin films investigated by calculating the texture coefficient TC (hkl) [49] for the planes using the following equation,…”

Section: X-ray Diffractionmentioning

confidence: 99%

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO2 thin films

Yadav¹

2015

Thin Solid Films

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Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

Cited by 30 publications

References 26 publications

Characterization of Zn doped SnO₂ thin films prepared by the SILAR technique for optoelectronic applications

Characterization of Zn doped SnO₂ thin films prepared by the SILAR technique for optoelectronic applications

Photodegradation of Rhodamine-B Dye under Natural Sunlight using CdO

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO2 thin films

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Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

Cited by 30 publications

References 26 publications

Characterization of Zn doped SnO2 thin films prepared by the SILAR technique for optoelectronic applications

Characterization of Zn doped SnO2 thin films prepared by the SILAR technique for optoelectronic applications

Photodegradation of Rhodamine-B Dye under Natural Sunlight using CdO

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO2 thin films

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Characterization of Zn doped SnO₂ thin films prepared by the SILAR technique for optoelectronic applications

Characterization of Zn doped SnO₂ thin films prepared by the SILAR technique for optoelectronic applications