The growing demand for portable and bendable nonvolatile memory systems has motivated extensive research in the field of flexible resistive random access memory (RRAM) devices. This study investigated the resistive switching and flexibility behavior of zinc oxide nanorods (ZNs) incorporated graphene oxide (GO) sheets. GOZNs-based RRAM devices having top metal aluminum electrodes were fabricated on flexible indium tin oxide (ITO) coated polyethylene terephthalate (ITOPET) substrate. The devices having the structure Al/GOZNs/ITOPET showed typical bipolar resistive switching characteristics with switching voltages lower than those of Al/GO/ITOPET devices. The significant (∼50%) decrement in operating voltages in the case of GOZNs-based RRAM was attributed to enhanced concentration of oxygen vacancies into the GO matrix due to the incorporation of ZNs, which was supported by X-ray photoelectron spectroscopy studies. These memory devices showed repeatable and reliable switching characteristics having an on/off ratio of ∼100, lower switching voltages, good retention properties up to ∼10 4 s, and endurance performance over 200 cycles. The resistance ratio of the GOZNs RRAM devices was maintained almost constant even for the extreme bending radius of 4 mm and mechanical flexing test over 10 3 cycles, indicating excellent flexibility. These GOZNs-based RRAM devices showed great potential for use in future flexible nonvolatile memory devices.
Transparent smooth and crack-free BaTiO3 thin films were deposited on stainless steel, fused silica, platinum plates, and platinized silicon wafers (100) using the sol-gel process. Barium 2-ethyl hexanoate and titanium isopropoxide were used as precursors. Annealing of the films at 750 °C for 2 h was necessary to get polycrystalline films. The electrical properties of the films prepared on stainless-steel substrates showed an electrode barrier effect whereas those prepared on platinum substrates were susceptible to ambient atmospheric humidity. However, films grown on platinum substrates and measured under dry conditions showed very good electrical properties. Ferroelectric hysteresis and C-V characteristics were also studied on these films.
The existence of ferromagnetism in the wonder material graphene has opened up the path for many future spintronics and memory applications. But simultaneously it is very important to understand the variation of these properties with temperature in regards to the device applications. Here we observed defect induced ferromagnetism in chemically reduced graphene and the effect of temperature on it. Several theoretical studies have proved that the main cause of ferromagnetism in graphene is due to various defects. The observed results established that these defects can be mended by treating the samples at elevated temperatures but sacrificing the ferromagnetism simultaneously. Hence, temperature plays a crucial role in controlling the magnetism as well as the defects in graphene. In this study we revealed that at 600 °C the self-repair mechanism helps the defects to mend but resulting in the decrement of magnetization and providing a good quality graphene with less defects.
Articles you may be interested inEffect of sol-age on the surface and optical properties of sol-gel derived mesoporous zirconia thin films Transparent and crackfree SrTiOs thin films were deposited on silicon wafers, fused silica, and stainless-steel substrates by sol-gel technique. Strontium ethyl hexanoate and titanium isopropoxide were used as starting materials. The surface topology of the films were studied by electron micrography and the structural properties by x-ray diffraction. The refractive index and band gap were measured by optical transmission and absorption spectroscopy. The films show very low leakage current and nearly temperature independent dielectric constant at high frequencies. The dielectric constant and loss factor at 1 kHz at room temperature were 131 and 0.022, respectively. The frequency dependent ac conductivity has been explained on the basis of potential barriers formed by the charge carriers trapped at intercrystalline regions.
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