Round-robin test of the photoluminescence method after electron irradiation was performed for quantifying low-level C impurities in the magneticfield-applied Czochralski Si crystals with a resistivity of about 50 Ω•cm (n-type) and with resistivity higher than 5 kΩ•cm (p-type). Their C concentrations were determined as ranging from 1.4 × 10 14 to 3.6 × 10 15 cm −3 by secondary ion mass spectroscopy. A universal correlation holds between the C concentration and the intensity ratio of the G-line to the band-edge emission normalized by the ratio of the reference sample, which can be used as a calibration curve for the C quantification. The measurement error and repeatability of the G-line intensity ratio are less than ±20% and less than ±10% deviation, respectively, and the overall error in the C concentration estimated from the calibration curve is less than ±30%. This demonstrates the effectiveness of the present method as a novel standard technique for quantifying low-level C impurities.
As an extension of the standardization of the photoluminescence method after electron irradiation [Tajima et al., Jpn. J. Appl. Phys. 59, SGGK05 (2020)], we present the calibration curve for quantifying C impurities ranging from 1 × 1014 to 3 × 1015 cm−3 in Czochralski-grown Si with resistivity higher than 50 Ω · cm (n-type) and than 5 kΩ · cm (p-type) and with the O concentration of 1.5 × 1017 cm−3. The intensity ratio of the G-line to the intrinsic emission normalized by the ratio of the reference sample was used as an index of the C concentration. The curve was determined as quadratic formulas by the substantial agreement between the theory and the experimental data, which allowed us to expand the applicability of the curve to the O concentration range up to 5.5 × 1017 cm−3. We showed that the relative root-mean-square discrepancy of the C concentration from values determined by secondary ion mass spectroscopy was 16%.
The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics was studied using samples with different roughness for frequency. From the obtained results, it was found that roughness with a low spatial wavelength affects electron mobility and gate insulating film reliability such as E
bd, Q
bd and SILC.
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