Round-robin test of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon

Abstract

Round-robin test of the photoluminescence method after electron irradiation was performed for quantifying low-level C impurities in the magneticfield-applied Czochralski Si crystals with a resistivity of about 50 Ω•cm (n-type) and with resistivity higher than 5 kΩ•cm (p-type). Their C concentrations were determined as ranging from 1.4 × 10 14 to 3.6 × 10 15 cm −3 by secondary ion mass spectroscopy. A universal correlation holds between the C concentration and the intensity ratio of the G-line to the band-edge emission normalized by the ratio of the reference sample, which can be used as a calibration curve for the C quantification. The measurement error and repeatability of the G-line intensity ratio are less than ±20% and less than ±10% deviation, respectively, and the overall error in the C concentration estimated from the calibration curve is less than ±30%. This demonstrates the effectiveness of the present method as a novel standard technique for quantifying low-level C impurities.

Calibration curve for the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon

“…In a previous paper 1) we reported on the activities to standardize the photoluminescence (PL) method after electron irradiation for quantifying low-level C impurities in Si crystals conducted by Working Group of the PL method in Japan Society of Newer Metals (JSNM) under the project "Acquisition and Promotion of International Standards for Energy Saving" planned by Ministry of Economy, Trade and Industry (METI). The standardization is being pursued to meet the recent stringent demands on high-quality Si wafers for power devices, especially the demand for the reduction of small amount of residual C impurities.…”

“…The standardization is being pursued to meet the recent stringent demands on high-quality Si wafers for power devices, especially the demand for the reduction of small amount of residual C impurities. [2][3][4] In the PL method 1) the intensity ratio of the G-line to the intrinsic band-edge emission normalized by the ratio of the reference sample was used as an index of the C concentration. A universal calibration curve was obtained in the concentration ranging from 1.4 × 10 14 to 3.6 × 10 15 cm −3 on the basis of the round-robin test (RRT) of the PL measurement for seven samples by ten organizations.…”

Method to detect carbon in silicon crystals in the concentration range down to 5 × 1014 cm−3 by Fourier transform infrared absorption at room temperature

“…In those samples impurity-bound-exciton emission becomes dominant and the intrinsic emission is weakened, resulting in a decrease in the intensity ratio of the G-line to the intrinsic emission, which is an index of the C concentration. 29,30) We can say that the quantitative agreement of the C concentration in the range down to 5 × 10 14 cm −3 is a remarkable achievement.…”

Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis

“…[ 26 ] Likewise, luminescence from radiation‐induced defects, such as the emission in Si (G‐line at 0.969 eV), was shown to correlate with the carbon (C) concentration and as such can be used to quantify C contamination in Si, after electron irradiation treatments. [ 27,28 ] A summary of all the reported calibration data in Si is provided in Table 1 .…”