Influence of silicon wafer surface roughness on semiconductor device characteristics

Abstract

The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics was studied using samples with different roughness for frequency. From the obtained results, it was found that roughness with a low spatial wavelength affects electron mobility and gate insulating film reliability such as E bd, Q bd and SILC.

A scandium doped aluminum nitride thin film bulk acoustic resonator

“…As shown in figure 1(e), the RMS of the 2.5 µm thick SiO 2 layer in this work is measured to be 1.9 nm. However, the typical RMS of the silicon wafer (polished side) is usually around 0.10-0.50 nm [34][35][36][37][38]. Compared to silicon substrate, the surface roughness of SiO 2 prepared in this work is significantly greater than that of silicon, possibly even exceeding it by more than tenfold.…”

Nanoscale Confinement of Dip‐Pen Nanolithography Written Phospholipid Structures on CuZr Nanoglasses

“…While nanoroughness can impact the phase state and thus mobility of lipids in liquid, [39] the roughness difference between homogeneous and 16 nm columnar nanoglass (0.1-0.8 nm) is of the same order of magnitude as in common L-DPN substrates showing no such abrupt change in spreading (e.g., silicon with native oxide layer ≈0.1 and glass surfaces ≈0.2-1.9 nm). [40][41][42]…”