Round-Robin Test of Photoluminescence Method after Electron Irradiation for Quantifying Low-Level Carbon in Silicon

Tajima, Michio; Samata, Shuichi; Nakagawa, Shoichi; Oriyama, Jun; Ishihara, Noriyuki

doi:10.7567/ssdm.2019.f-1-03

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“…The round-robin test (RRT) of the PL method was conducted by the Working Group and the preliminary results were presented at the 2019 International Conference on Solid State Devices and Materials (SSDM2019). 18) In this paper we describe the detailed analysis of the RRT results and present the calibration curve and the precision of the method based on them. The paper is organized as follows: theoretical background of the PL method after electron irradiation is explained in Sect.…”

Section: Introductionmentioning

confidence: 99%

Round-robin test of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon

Tajima

Samata

Nakagawa³

et al. 2020

Jpn. J. Appl. Phys.

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Round-robin test of the photoluminescence method after electron irradiation was performed for quantifying low-level C impurities in the magneticfield-applied Czochralski Si crystals with a resistivity of about 50 Ω•cm (n-type) and with resistivity higher than 5 kΩ•cm (p-type). Their C concentrations were determined as ranging from 1.4 × 10 14 to 3.6 × 10 15 cm −3 by secondary ion mass spectroscopy. A universal correlation holds between the C concentration and the intensity ratio of the G-line to the band-edge emission normalized by the ratio of the reference sample, which can be used as a calibration curve for the C quantification. The measurement error and repeatability of the G-line intensity ratio are less than ±20% and less than ±10% deviation, respectively, and the overall error in the C concentration estimated from the calibration curve is less than ±30%. This demonstrates the effectiveness of the present method as a novel standard technique for quantifying low-level C impurities.

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Section: Introductionmentioning

confidence: 99%