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The fascinating electronic and optoelectronic properties of free-standing graphene has led to the exploration of alternative two-dimensional materials that can be easily integrated with current generation of electronic technologies. In contrast to 2D oxide and dichalcogenides, elemental 2D analogues of graphene, which include monolayer silicon (silicene), are fast emerging as promising alternatives, with predictions of high degree of integration with existing technologies. This article reviews this emerging class of 2D elemental materials - silicene, germanene, stanene, and phosphorene--with emphasis on fundamental properties and synthesis techniques. The need for further investigations to establish controlled synthesis techniques and the viability of such elemental 2D materials is highlighted. Future prospects harnessing the ability to manipulate the electronic structure of these materials for nano- and opto-electronic applications are identified.

The properties and applications of molybdenum oxides are reviewed in depth. Molybdenum is found in various oxide stoichiometries, which have been employed for different high-value research and commercial applications. The great chemical and physical characteristics of molybdenum oxides make them versatile and highly tunable for incorporation in optical, electronic, catalytic, bio, and energy systems. Variations in the oxidation states allow manipulation of the crystal structure, morphology, oxygen vacancies, and dopants, to control and engineer electronic states. Despite this overwhelming functionality and potential, a definitive resource on molybdenum oxide is still unavailable. The aim here is to provide such a resource, while presenting an insightful outlook into future prospective applications for molybdenum oxides.

In the quest to discover the properties of planar semiconductors, two‐dimensional molybdenum trioxide and dichalcogenides have recently attracted a large amount of interest. This family, which includes molybdenum trioxide (MoO3), disulphide (MoS2), diselenide (MoSe2) and ditelluride (MoTe2), possesses many unique properties that make its compounds appealing for a wide range of applications. These properties can be thickness dependent and may be manipulated via a large number of physical and chemical processes. In this Feature Article, a comprehensive review is delivered of the fundamental properties, synthesis techniques and applications of layered and planar MoO3, MoS2, MoSe2, and MoTe2 along with their future prospects.

We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.

The translation of biological synapses onto a hardware platform is an important step toward the realization of brain‐inspired electronics. However, to mimic biological synapses, devices till‑date continue to rely on the need for simultaneously altering the polarity of an applied electric field or the output of these devices is photonic instead of an electrical synapse. As the next big step toward practical realization of optogenetics inspired circuits that exhibit fidelity and flexibility of biological synapses, optically‑stimulated synaptic devices without a need to apply polarity‑altering electric field are needed. Utilizing a unique photoresponse in black phosphorus (BP), here reported is an all‑optical pathway to emulate excitatory and inhibitory action potentials by exploiting oxidation‑related defects. These optical synapses are capable of imitating key neural functions such as psychological learning and forgetting, spatiotemporally correlated dynamic logic and Hebbian spike‑time dependent plasticity. These functionalities are also demonstrated on a flexible platform suitable for wearable electronics. Such low‐power consuming devices are highly attractive for deployment in neuromorphic architectures. The manifestation of cognition and spatiotemporal processing solely through optical stimuli provides an incredibly simple and powerful platform to emulate sophisticated neural functionalities such as associative sensory data processing and decision making.

Devices that manipulate light represent the future of information processing. Flat optics and structures with subwavelength periodic features (metasurfaces) provide compact and efficient solutions. The key bottleneck is efficiency, and replacing metallic resonators with dielectric resonators has been shown to significantly enhance performance. To extend the functionalities of dielectric metasurfaces to real-world optical applications, the ability to tune their properties becomes important. In this article, we present a mechanically tunable all-dielectric metasurface. This is composed of an array of dielectric resonators embedded in an elastomeric matrix. The optical response of the structure under a uniaxial strain is analyzed by mechanical−electromagnetic co-simulations. It is experimentally demonstrated that the metasurface exhibits remarkable resonance shifts. Analysis using a Lagrangian model reveals that strain modulates the near-field mutual interaction between resonant dielectric elements. The ability to control and alter inter-resonator coupling will position dielectric metasurfaces as functional elements of reconfigurable optical devices.

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