Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide

Abstract

We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.

A van der Waals Density Functional Study of MoO3 and Its Oxygen Vacancies

“…Inclusion of nonlocal bonding in the computation of MoO 3 helps with the description of anisotropic bulk properties as well as supporting the use of twodimensional sheets, belts and flakes in many electronic devices. [10][11][12][13][14][15] The thermodynamically stable phase of MoO 3 is a unique orthorhombic layered structure (Figure 1), space group Pbnm, with each layer comprising two sub-layers of MoO 6 distorted octahedra, edge-sharing along the c-axis and corner-sharing along the a-axis. The layers are bound by weak, mainly van der Waals, interactions and the separation between the layers is known as the van der Waals gap.…”

Processing and charge state engineering of MoOx

“…[12][13][14][15][16][17][18][19][20][21][22] Owing to its high work function -up to 6.9 eV [12] and to the layered structure of α-MoO 3 , MoO x is also employed as a 2D material beyond graphene and as efficient hole contact on 2D transition metal dichalcogenides for p-type field effect transistors (p-FETs). [23][24][25] In view of a reliable device performance, the control over the chemical and physical properties of the MoO x system is mandatory. It has been recently reported 14,[26][27][28][29][30][31][32] that in MoO x with x < 3, oxygen vacancies originated from partially populated d-states, give rise to occupied energy states within the forbidden gap -∼ 3.0 eV at room temperature (RT) 12 -becoming bands above a critical concentration and driving the Fermi level close to the conduction band.…”

Correlation between Electron Mobility and Static Dielectric Permittivity of n-InSb

“…The carrier mobility is an important device parameter in semiconductor applications which has received considerable attention [1][2][3]. The evaluation of the electron mobility in an n-type semiconductor depends on a set of parameters such as temperature and doping concentration along with some material characteristics like static dielectric permittivity, electron effective mass, deformation potential and piezoelectric constant.…”