The fascinating electronic and optoelectronic properties of free-standing graphene has led to the exploration of alternative two-dimensional materials that can be easily integrated with current generation of electronic technologies. In contrast to 2D oxide and dichalcogenides, elemental 2D analogues of graphene, which include monolayer silicon (silicene), are fast emerging as promising alternatives, with predictions of high degree of integration with existing technologies. This article reviews this emerging class of 2D elemental materials - silicene, germanene, stanene, and phosphorene--with emphasis on fundamental properties and synthesis techniques. The need for further investigations to establish controlled synthesis techniques and the viability of such elemental 2D materials is highlighted. Future prospects harnessing the ability to manipulate the electronic structure of these materials for nano- and opto-electronic applications are identified.

In the quest to discover the properties of planar semiconductors, two‐dimensional molybdenum trioxide and dichalcogenides have recently attracted a large amount of interest. This family, which includes molybdenum trioxide (MoO3), disulphide (MoS2), diselenide (MoSe2) and ditelluride (MoTe2), possesses many unique properties that make its compounds appealing for a wide range of applications. These properties can be thickness dependent and may be manipulated via a large number of physical and chemical processes. In this Feature Article, a comprehensive review is delivered of the fundamental properties, synthesis techniques and applications of layered and planar MoO3, MoS2, MoSe2, and MoTe2 along with their future prospects.

We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.

Two-dimensional (2D) transition metal dichalcogenide semiconductors offer unique electronic and optical properties, which are significantly different from their bulk counterparts. It is known that the electronic structure of 2D MoS2, which is the most popular member of the family, depends on the number of layers. Its electronic structure alters dramatically at near atomically thin morphologies, producing strong photoluminescence (PL). Developing processes for controlling the 2D MoS2 PL is essential to efficiently harness many of its optical capabilities. So far, it has been shown that this PL can be electrically or mechanically gated. Here, we introduce an electrochemical approach to actively control the PL of liquid-phase-exfoliated 2D MoS2 nanoflakes by manipulating the amount of intercalated ions including Li(+), Na(+), and K(+) into and out of the 2D crystal structure. These ions are selected as they are crucial components in many bioprocesses. We show that this controlled intercalation allows for large PL modulations. The introduced electrochemically controlled PL will find significant applications in future chemical and bio-optical sensors as well as optical modulators/switches.

Transition metal oxides (TMOs) are a fascinating class of materials due to their wide ranging electronic, chemical and mechanical properties. Additionally, they are gaining increasing attention for their thermoelectric (TE) properties due to their high temperature stability, tunable electronic and phonon transport properties and well established synthesis techniques. In this article, we review TE TMOs at cryogenic, ambient and high temperatures. An overview of strategies used for morphological, composting and stoichiometric tuning of their key TE parameters is presented. This article also provides an outlook on the current and future prospects of implementing TMOs for a wide range of TE applications.

Two dimensional molybdenum disulfide (MoS(2)) has recently become of interest to semiconductor and optic industries. However, the current methods for its synthesis require harsh environments that are not compatible with standard fabrication processes. We report on a facile synthesis method of layered MoS(2) using a thermal evaporation technique, which requires modest conditions. In this process, a mixture of MoS(2) and molybdenum dioxide (MoO(2)) is produced by evaporating sulfur powder and molybdenum trioxide (MoO(3)) nano-particles simultaneously. Further annealing in a sulfur-rich environment transforms majority of the excess MoO(2) into layered MoS(2). The deposited MoS(2) is then mechanically exfoliated into minimum resolvable atomically thin layers, which are characterized using micro-Raman spectroscopy and atomic force microscopy. Furthermore Raman spectroscopy is employed to determine the effect of electrochemical lithium ion exposure on atomically thin layers of MoS(2).

Planar two-dimensional (2D) materials are possibly the ideal channel candidates for future field effect transistors (FETs), due to their unique electronic properties. However, the performance of FETs based on 2D materials is yet to exceed those of conventional silicon based devices. Here we present a 2D channel thin film made from liquid phase exfoliated molybdenum oxide nanoflake inks with highly controllable sub-stoichiometric levels. The ability to induce oxygen vacancies by solar light irradiation in an aqueous environment allows the tuning of electronic properties in 2D sub-stoichiometric molybdenum oxides (MoO 3-x ). The highest mobility is found to be ~ 600 cm 2 V −1 s −1 with an estimated free electron concentration of ~ 1.610 21 cm -3 and an optimal I On /I Off ratio of >10 5 for the FETs made of 2D flakes irradiated for 30 min (x = 0.042). These values are significant and represent a real opportunity to realize the next generation of tunable electronic devices using electronic inks.

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