High-power high-brightness broad-area diode lasers have poor lateral beam quality, which has limited the application range of this kind of device. To improve the lateral beam quality, a sawtooth microstructure laser was proposed and the microstructures were carefully designed according to the profiles of each lateral mode and their dependence on the self-heating induced thermal lens effect. As a result of selective mode loss adjustment, a 42% improvement in lateral beam quality was achieved under the power-maintained condition. This technology enables us to develop high-brightness direct-diode laser systems.
The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.
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